Kioxia corporation (20240324215). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Takashi Kurusu of Yokkaichi Mie (JP)
Koji Shirai of Yokohama Kanagawa (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324215 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract includes a stacked body with conductive and insulating layers, a columnar body within the stacked body, and a source line layer.
- The columnar body consists of a core insulating layer, a semiconductor layer, and a memory layer.
- A portion of the source line layer extends into the stacked body, with a pointed portion at the interface of the core insulating layer, semiconductor layer, and source line layer.
- The end face and side surface of the semiconductor layer form an acute angle at the pointed portion.
Potential Applications:
- This technology can be used in various memory devices such as flash memory, DRAM, and SRAM.
- It can also be applied in embedded systems, mobile devices, and data storage solutions.
Problems Solved:
- Improved memory device performance and reliability.
- Enhanced data storage capacity and speed.
- Efficient use of space in semiconductor devices.
Benefits:
- Higher data transfer rates.
- Increased memory density.
- Enhanced overall device performance.
Commercial Applications:
- Memory chips for consumer electronics.
- Data centers and cloud computing servers.
- Automotive electronics and IoT devices.
Questions about the Technology: 1. How does the pointed portion of the source line layer contribute to the performance of the memory device? 2. What are the specific advantages of having a columnar body in the stacked structure of the semiconductor memory device?
Frequently Updated Research: Ongoing research focuses on optimizing the design and materials used in semiconductor memory devices to further improve performance and efficiency.
Original Abstract Submitted
a semiconductor memory device includes a stacked body in which conductive layers and insulating layers are alternately stacked in a first direction, a columnar body in the stacked body and extending in the first direction, and a source line layer. the columnar body includes a core insulating layer, a semiconductor layer surrounding the core insulating layer, and a memory layer surrounding the semiconductor layer. a portion of the source line layer extends in the first direction to be provided in the stacked body, has a side surface in contact with the semiconductor layer and an end face in contact with the core insulating layer, and includes a pointed portion on the end face at an interface of the portion, the core insulating layer, and the semiconductor layer, wherein the end face and the side surface of the semiconductor layer form an acute angle at the pointed portion.
