Kioxia corporation (20240324174). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Takafumi Masuda of Kawasaki Kanagawa (JP)
Mutsumi Okajima of Yokkaichi Mie (JP)
Nobuyoshi Saito of Ota Tokyo (JP)
Keiji Ikeda of Kawasaki Kanagawa (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324174 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of memory layers arranged in a first direction and via-wiring extending in the same direction. Each memory layer includes a semiconductor layer connected to the via-wiring, a gate electrode facing the semiconductor layer, a memory portion, a wiring, and a connection wiring linking the gate electrode and the wiring.
- Memory layers arranged in a first direction
- Via-wiring extending in the first direction
- Semiconductor layer connected to the via-wiring
- Gate electrode facing the semiconductor layer
- Memory portion on one side of the semiconductor layer
- Wiring on the other side of the semiconductor layer
- Connection wiring linking the gate electrode and the wiring
Potential Applications: - High-speed data storage devices - Advanced computing systems - Memory-intensive applications in electronics
Problems Solved: - Increased memory capacity - Enhanced data processing speed - Improved efficiency in electronic devices
Benefits: - Faster data access - Higher storage capacity - Enhanced performance in electronic devices
Commercial Applications: Title: "Innovative Semiconductor Memory Device for Enhanced Data Processing" This technology can be used in: - Consumer electronics - Data centers - Automotive systems
Questions about the technology: 1. How does this semiconductor memory device improve data processing speed? 2. What sets this memory device apart from traditional memory technologies?
Frequently Updated Research: Stay updated on advancements in semiconductor memory technology to leverage the latest innovations in data storage and processing.
Original Abstract Submitted
a semiconductor memory device includes memory layers arranged in a first direction and a via-wiring extending in the first direction. the plurality of memory layers each include a semiconductor layer electrically connected to the via-wiring, a gate electrode opposed to surfaces of the semiconductor layer in the first direction, a memory portion disposed on one side in a second direction with respect to the semiconductor layer, a wiring disposed on the other side in the second direction with respect to the semiconductor layer, and a connection wiring connected to the gate electrode and the wiring. the connection wiring includes a first part extending in the second direction along a side surface of the gate electrode in the third direction and a second part continuous with the first part, extending in the third direction along a side surface of the wiring in the second direction.
