Kioxia corporation (20240321367). SEMICONDUCTOR MEMORY DEVICE simplified abstract

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SEMICONDUCTOR MEMORY DEVICE

Organization Name

kioxia corporation

Inventor(s)

Yoshikazu Harada of Kawasaki (JP)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321367 titled 'SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation: The semiconductor memory device described in the patent application includes a memory cell with a transistor, an interconnect, and a first circuit. The first circuit is responsible for performing erase operations, including applying an erase voltage and verifying the threshold voltage of the memory cell. It can suspend and resume erase operations based on certain conditions.

  • The memory device has a memory cell with a transistor, an interconnect, and a first circuit.
  • The first circuit handles erase operations, applying erase voltage and verifying threshold voltage.
  • It can suspend erase operations upon receiving a command and resume based on voltage values.

Potential Applications: 1. Semiconductor memory devices in various electronic devices. 2. Data storage systems requiring efficient erase operations. 3. Memory technologies in the semiconductor industry.

Problems Solved: 1. Efficient erase operations in semiconductor memory devices. 2. Improved control over erase processes. 3. Enhanced reliability of memory cells.

Benefits: 1. Faster erase operations. 2. Better management of memory cell threshold voltages. 3. Increased reliability of semiconductor memory devices.

Commercial Applications: The technology can be utilized in the development of faster and more reliable semiconductor memory devices for consumer electronics, data storage systems, and other memory-intensive applications. This innovation could lead to improved performance and longevity of memory devices in the market.

Prior Art: Prior research in semiconductor memory devices and erase operations can provide valuable insights into the development and implementation of this technology. Researchers can explore existing patents and publications in the field to understand the evolution of similar innovations.

Frequently Updated Research: Researchers in the semiconductor industry may be conducting ongoing studies on memory cell technologies, erase operations, and circuit design. Staying updated on the latest research findings can help in further enhancing the efficiency and performance of semiconductor memory devices.

Questions about Semiconductor Memory Device: 1. How does the first circuit determine when to suspend an erase operation? 2. What are the potential implications of this technology on the future of semiconductor memory devices?


Original Abstract Submitted

according to one embodiment, a semiconductor memory device includes a memory cell including a transistor, an interconnect, and a first circuit. the first circuit performs an erase operation including an erase voltage applying operation of applying an erase voltage between a gate of the transistor and a channel of the transistor via the interconnect, and an erase verify operation of determining a threshold voltage of the memory cell. the first circuit performs a first suspension processing of suspending the erase operation upon receiving a first command during the erase operation. the first circuit performs the erase voltage applying operation or the erase verify operation at the time of resuming the erase operation suspended by the first suspension processing, based on a voltage value of the interconnect at the time of receiving the first command.