Kioxia corporation (20240315052). SEMICONDUCTOR STORAGE DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR STORAGE DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Semiconductor Storage Devices
- 1.13 Original Abstract Submitted
SEMICONDUCTOR STORAGE DEVICE
Organization Name
Inventor(s)
Daisaburo Takashima of Yokohama Kanagawa (JP)
SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240315052 titled 'SEMICONDUCTOR STORAGE DEVICE
Simplified Explanation
The semiconductor storage device described in the patent application consists of a stacked body with multiple conductive layers separated by insulating layers. Within this body, there is a columnar structure that contains various films extending in the stacking direction.
- The columnar structure includes a variable-resistance film, a semiconductor film, an insulating film, and a resistor film.
- Memory cells are formed at the intersections of the conductive layers, variable-resistance film, and semiconductor film.
- The thickness of the resistor film in each memory cell is greater than the thickness of the variable-resistance film.
Key Features and Innovation
- Stacked body with multiple conductive layers and insulating layers.
- Columnar structure containing variable-resistance film, semiconductor film, insulating film, and resistor film.
- Memory cells formed at intersections of conductive layers, variable-resistance film, and semiconductor film.
- Resistor film thickness greater than variable-resistance film thickness in memory cells.
Potential Applications
This technology could be used in various semiconductor storage devices, such as non-volatile memory chips and solid-state drives.
Problems Solved
This technology addresses the need for efficient and reliable semiconductor storage devices with improved memory cell structures.
Benefits
- Enhanced performance and reliability in semiconductor storage devices.
- Improved memory cell structure for better data storage capabilities.
Commercial Applications
Potential Commercial Uses and Market Implications
This technology could have significant commercial applications in the semiconductor industry, particularly in the development of advanced memory storage solutions for various electronic devices.
Prior Art
Further research can be conducted in the field of semiconductor memory devices to explore similar technologies and innovations.
Frequently Updated Research
Ongoing research in semiconductor materials and memory storage technologies may provide additional insights into the development and optimization of this technology.
Questions about Semiconductor Storage Devices
What are the key components of a semiconductor storage device?
A semiconductor storage device typically consists of conductive layers, insulating layers, and memory cells that store data.
How does the thickness of the resistor film impact the performance of memory cells?
The thickness of the resistor film affects the resistance levels within the memory cells, which can influence the overall functionality and reliability of the semiconductor storage device.
Original Abstract Submitted
a semiconductor storage device includes a stacked body having a plurality of conductive layers stacked in a stacking direction with an insulating layer interposed therebetween, and a columnar structure that extends in the stacking direction in the stacked body. the columnar structure has a variable-resistance film, a semiconductor film, an insulating film, and a resistor film, all of which extend in the stacking direction in the stacked body. the semiconductor film is between the variable-resistance film and the conductive layer. the insulating film is between the semiconductor film and the conductive layer. the resistor film is between the variable-resistance film and the semiconductor film. memory cells are formed at locations where the conductive layers, the variable-resistance film, and the semiconductor film intersect. in each of the memory cells, the thickness of the resistor film is greater than the thickness of the variable-resistance film.
