Kioxia corporation (20240298450). MEMORY DEVICE simplified abstract
Contents
MEMORY DEVICE
Organization Name
Inventor(s)
Haruka Sakuma of Yokkaichi Mie (JP)
Masumi Saitoh of Yokohama Kanagawa (JP)
Kouji Matsuo of Ama Aichi (JP)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240298450 titled 'MEMORY DEVICE
The memory device described in the abstract consists of multiple layers including electrode layers, conductive layers, insulating layers, semiconductor layers, and gate electrode layers.
- The first electrode layer extends in a first direction intersecting the substrate surface.
- The second electrode layer also extends in the first direction.
- The first conductive layer surrounds both electrode layers.
- The first insulating layer, containing hafnium oxide and/or zirconium oxide, separates the first electrode layer from the first conductive layer.
- The second insulating layer, also containing hafnium oxide and/or zirconium oxide, separates the second electrode layer from the first conductive layer.
- The first gate electrode layer extends in the first direction and is surrounded by a first semiconductor layer, which is electrically connected to the first conductive layer.
- The first gate insulating layer separates the first gate electrode layer from the first semiconductor layer.
Potential Applications: - Memory devices in electronic devices - Data storage in computers and servers - Integrated circuits in various electronics
Problems Solved: - Improved memory device performance - Enhanced data storage capabilities - Increased efficiency in electronic devices
Benefits: - Higher data storage capacity - Faster data processing speeds - Enhanced overall performance of electronic devices
Commercial Applications: Title: Advanced Memory Devices for High-Performance Electronics This technology can be used in: - Consumer electronics - Data centers - Telecommunications equipment
Questions about the technology: 1. How does the use of hafnium oxide and zirconium oxide in the insulating layers improve the memory device's performance? 2. What are the potential challenges in scaling up this memory device technology for mass production?
Original Abstract Submitted
a memory device includes: a first electrode layer extending in a first direction intersecting a surface of a substrate; a second electrode layer extending in the first direction; a first conductive layer surrounding the first electrode layer and the second electrode layer; a first insulating layer between the first electrode layer and the first conductive layer, surrounding the first electrode layer, and including hafnium oxide and/or zirconium oxide; a second insulating layer between the second electrode layer and the first conductive layer, surrounding the second electrode layer, and including hafnium oxide and/or zirconium oxide; a first gate electrode layer extending in the first direction, a first semiconductor layer surrounding the first gate electrode layer and electrically connected to the first conductive layer; and a first gate insulating layer between the first gate electrode layer and the first semiconductor layer and surrounding the first gate electrode layer.
