Kabushiki kaisha toshiba (20240322021). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yoko Iwakaji of Meguro Tokyo (JP)
Tomoko Matsudai of Shibuya Tokyo (JP)
Ryohei Gejo of Kawasaki Kanagawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240322021 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of multiple layers and electrodes, including insulating films and semiconductor layers of different conductivity types. The device aims to improve carrier concentration in the semiconductor layers for enhanced performance.
- The device includes a first electrode, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a second electrode, a third electrode, a first insulating film, and a third semiconductor layer of the first conductivity type.
- The first semiconductor layer is connected to the first electrode, while the second semiconductor layer contacts the first semiconductor layer.
- The second electrode is connected to the second semiconductor layer, and the first insulating film is located between the third electrode and the semiconductor layers.
- The third semiconductor layer has a higher carrier concentration than the first semiconductor layer, aiming to improve the overall performance of the semiconductor device.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the manufacturing of high-performance transistors and integrated circuits.
Problems Solved: - Enhances carrier concentration in semiconductor layers. - Improves the overall performance and efficiency of semiconductor devices.
Benefits: - Increased performance and efficiency of semiconductor devices. - Potential for advancements in electronic applications and technologies.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology could be commercialized in the semiconductor industry for the production of high-performance electronic devices, leading to improved efficiency and functionality in various applications.
Questions about the technology: 1. How does the higher carrier concentration in the third semiconductor layer impact the overall performance of the device? 2. What are the potential implications of this technology in the development of next-generation electronic devices?
Original Abstract Submitted
a semiconductor device includes a first electrode, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a second electrode, a third electrode, a first insulating film, and a third semiconductor layer of the first conductivity type. the first semiconductor layer is connected to the first electrode. the second semiconductor layer contacts the first semiconductor layer. the second electrode is connected to the second semiconductor layer. the first insulating film is located between the third electrode and the first semiconductor layer and between the third electrode and the second semiconductor layer. the third semiconductor layer is located between the first insulating film and the first semiconductor layer. the third semiconductor layer contacts the first insulating film and the first semiconductor layer. the third semiconductor layer has a higher carrier concentration than the first semiconductor layer.
