Kabushiki kaisha toshiba (20240321871). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kazuki Minamikawa of Nomi Ishikawa (JP)
Daiki Yoshikawa of Kanazawa Ishikawa (JP)
Kazutoshi Nakamura of Nonoichi Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321871 titled 'SEMICONDUCTOR DEVICE
According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, and a second electrode. The third semiconductor region is located on the second semiconductor region, with a higher second-conductivity-type impurity concentration than the second semiconductor region. The second electrode is situated on the third semiconductor region, comprising a first part and a second part. The first part is within the second semiconductor region, while the second part is positioned on the first part, contacting the third semiconductor region in a direction perpendicular to a first direction from the first electrode towards the first semiconductor region. The length of the first part exceeds the length of the second part in the perpendicular direction.
- The semiconductor device features a unique electrode structure with distinct parts for efficient contact.
- The third semiconductor region has a higher impurity concentration than the second semiconductor region, enhancing conductivity.
- The second electrode design allows for optimized electrical connections within the device.
- The device configuration enables improved performance and functionality in semiconductor applications.
- This innovation contributes to advancements in semiconductor technology by enhancing device efficiency and reliability.
Potential Applications: - This technology can be applied in various semiconductor devices such as diodes, transistors, and integrated circuits. - It can be utilized in power electronics, telecommunications, and consumer electronics for enhanced performance.
Problems Solved: - Addresses the need for improved electrical contact and conductivity in semiconductor devices. - Enhances the efficiency and reliability of semiconductor components.
Benefits: - Improved device performance and functionality. - Enhanced electrical connections and conductivity. - Increased efficiency and reliability in semiconductor applications.
Commercial Applications: Title: Advanced Semiconductor Device with Optimized Electrode Structure This technology can be commercialized in the semiconductor industry for the development of high-performance electronic devices. It has implications in sectors such as power electronics, telecommunications, and consumer electronics, offering enhanced functionality and reliability.
Questions about Semiconductor Device with Optimized Electrode Structure:
1. How does the electrode structure in this semiconductor device differ from traditional designs? The electrode structure in this semiconductor device features distinct parts for efficient contact, optimizing electrical connections within the device.
2. What advantages does the higher impurity concentration in the third semiconductor region provide? The higher impurity concentration in the third semiconductor region enhances conductivity, contributing to improved device performance and functionality.
Original Abstract Submitted
according to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, and a second electrode. the third semiconductor region is located on the second semiconductor region, and has a higher second-conductivity-type impurity concentration than the second semiconductor region. the second electrode is located on the third semiconductor region. the second electrode includes a first part and a second part. the first part is located in the second semiconductor region. the second part is positioned on the first part, and contacts the third semiconductor region in a second direction perpendicular to a first direction from the first electrode toward the first semiconductor region. a length of the first part is greater than a length of the second part in the second direction.
