Kabushiki kaisha toshiba (20240313109). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Katsuhisa Tanaka of Himeji Hyogo (JP)
Hiroshi Kono of Himeji Hyogo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240313109 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of various semiconductor regions, electrodes, and a gate electrode with insulating layers.
- The device includes a first electrode, first and third semiconductor regions of different conductivity types, and multiple other semiconductor regions of the second conductivity type.
- The gate electrode is positioned among the semiconductor regions, and the third electrode is located on one of the semiconductor regions with an insulating layer in between.
- The semiconductor regions are separated from each other to perform specific functions within the device.
Potential Applications: - This semiconductor device could be used in various electronic applications such as integrated circuits, power electronics, and sensors. - It may find applications in industries like telecommunications, automotive, and consumer electronics.
Problems Solved: - The device addresses the need for efficient and reliable semiconductor components in modern electronic devices. - It provides a solution for controlling the flow of current and enhancing the performance of electronic systems.
Benefits: - Improved efficiency and performance of electronic devices. - Enhanced control over semiconductor properties for better functionality. - Potential cost savings in manufacturing processes.
Commercial Applications: - The technology could be utilized in the production of advanced electronic devices for commercial sale. - It may impact the semiconductor industry by introducing new capabilities and features in electronic components.
Questions about the Technology: 1. How does the positioning of the semiconductor regions impact the functionality of the device? 2. What are the specific advantages of having multiple semiconductor regions with different conductivity types in the device?
Original Abstract Submitted
according to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a fourth semiconductor region of the second conductivity type, a fifth semiconductor region of the second conductivity type, a sixth semiconductor region of the second conductivity type, a seventh semiconductor region of the second conductivity type, an eighth semiconductor region of the second conductivity type, a second electrode, and a third electrode. the fourth semiconductor region is located around the second semiconductor region and the gate electrode. the fourth, fifth and sixth semiconductor regions are separated from each other. the fourth, seventh and eighth semiconductor regions are separated from each other. the third electrode is located on the eighth semiconductor region with an insulating layer interposed.
