Kabushiki kaisha toshiba (20240313108). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Katsuhisa Tanaka of Himeji Hyogo (JP)
Hiroshi Kono of Himeji Hyogo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240313108 titled 'SEMICONDUCTOR DEVICE
The patent application describes a silicon carbide layer with specific surface configurations and the inclusion of an inter-layer insulating film and a field plate within the layer.
- The silicon carbide layer has a first surface, a second surface recessed further towards a third surface, and a side surface.
- An inter-layer insulating film is located on the second surface, with a thickness greater than the difference in heights between the first and second surfaces.
- A field plate with lower resistivity than the insulating film is positioned within the inter-layer insulating film.
Potential Applications: - Power electronics - High-temperature applications - Semiconductor devices
Problems Solved: - Improved insulation and field control in silicon carbide devices - Enhanced performance and reliability in high-power applications
Benefits: - Increased efficiency and durability in power electronics - Better thermal management in high-temperature environments - Enhanced overall performance of semiconductor devices
Commercial Applications: - Power converters - Electric vehicles - Renewable energy systems
Questions about the technology: 1. How does the field plate contribute to the performance of silicon carbide devices? 2. What are the specific advantages of using silicon carbide in high-temperature applications?
Frequently Updated Research: - Ongoing studies on optimizing field plate design for enhanced device performance.
Original Abstract Submitted
a silicon carbide layer includes a first surface, a second surface, a third surface positioned at a side opposite to the first and second surfaces in a first direction, and a side surface. the second surface is at a position recessed further toward the third surface side than the first surface. an inter-layer insulating film is located on the second surface. a thickness of the inter-layer insulating film is greater than a difference in heights in the first direction between the first surface and the second surface. a field plate is located in the inter-layer insulating film. the field plate has a lower resistivity than the inter-layer insulating film.
