Kabushiki kaisha toshiba (20240313104). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Masaru Furukawa of Himeji Hyogo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240313104 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a silicon carbide layer with different regions of varying conductivity types, as well as a gate electrode.
- The device includes a first silicon carbide region of a first conductivity type, a second silicon carbide region of a second conductivity type, and a third silicon carbide region of the first conductivity type.
- The first silicon carbide region is composed of first, second, and third regions, with the second and third regions having higher impurity concentrations than the first region.
- The second and third regions are alternately provided in a direction parallel to the first face of the silicon carbide layer.
Potential Applications: - Power electronics - High-temperature applications - Electric vehicles
Problems Solved: - Improved efficiency in power electronics - Enhanced performance in high-temperature environments - Increased reliability in electric vehicle components
Benefits: - Higher efficiency - Greater durability - Improved overall performance
Commercial Applications: Silicon carbide semiconductor devices can be used in various industries such as automotive, aerospace, and renewable energy for their high-performance capabilities.
Questions about Silicon Carbide Semiconductor Devices: 1. How does the impurity concentration affect the performance of the different regions in the silicon carbide layer? 2. What are the specific advantages of using silicon carbide in semiconductor devices compared to other materials?
Original Abstract Submitted
a semiconductor device according to an embodiment includes a silicon carbide layer having a first face and a second face; a first silicon carbide region of a first conductivity type; a second silicon carbide region of a second conductivity type; a third silicon carbide region of the first conductivity type in the silicon carbide layer in this order in a direction from the second face to the first face; and a gate electrode. the first silicon carbide region includes a first region, second regions, and third regions. the second regions and the third regions are provided between the first region and the second silicon carbide region. the second regions and the third regions are alternately provided in a first direction parallel to the first face, and the first conductivity type impurity concentration of the second regions is higher than those of the first region and the third regions.
