International business machines corporation (20240203816). HEAT DISSIPATION STRUCTURES FOR BONDED WAFERS simplified abstract
Contents
HEAT DISSIPATION STRUCTURES FOR BONDED WAFERS
Organization Name
international business machines corporation
Inventor(s)
Kisik Choi of Watervliet NY (US)
Nicholas Alexander Polomoff of Hopewell Junction NY (US)
Brent A. Anderson of Jericho VT (US)
Lawrence A. Clevenger of Saratoga Springs NY (US)
Ruilong Xie of Niskayuna NY (US)
Terence Hook of Jericho Center VT (US)
Matthew Angyal of Stormville NY (US)
HEAT DISSIPATION STRUCTURES FOR BONDED WAFERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203816 titled 'HEAT DISSIPATION STRUCTURES FOR BONDED WAFERS
The patent application describes semiconductor devices and methods that involve a front-end-of-line (FEOL) layer and a back-end-of-line (BEOL) layer with a thermal transfer structure. A carrier wafer is bonded to the BEOL layer and includes a thermal dissipation structure in contact with the thermal transfer structure.
- FEOL layer and BEOL layer integration
- Thermal transfer structure in the BEOL layer
- Carrier wafer with thermal dissipation structure
- Improved thermal management in semiconductor devices
- Enhanced performance and reliability of the devices
Potential Applications: - Semiconductor manufacturing - Electronics industry - Thermal management systems
Problems Solved: - Heat dissipation in semiconductor devices - Thermal stress management - Enhanced device performance and longevity
Benefits: - Improved thermal efficiency - Enhanced device reliability - Increased performance capabilities
Commercial Applications: Title: "Advanced Thermal Management Solutions for Semiconductor Devices" This technology can be utilized in various commercial applications such as: - High-performance computing - Automotive electronics - Aerospace industry
Questions about Semiconductor Devices with Advanced Thermal Management Solutions: 1. How does the integration of FEOL and BEOL layers improve thermal management in semiconductor devices?
- The integration allows for more efficient heat transfer and dissipation, enhancing overall device performance.
2. What are the potential long-term benefits of using thermal dissipation structures in carrier wafers?
- The use of thermal dissipation structures can lead to increased device reliability and longevity.
Original Abstract Submitted
semiconductor devices and methods of forming the same include a front-end-of-line (feol) layer. a back-end-of-line (beol) layer includes a thermal transfer structure in contact with the feol layer. a carrier wafer is bonded to the beol layer and includes a thermal dissipation structure in contact with the thermal transfer structure.
- International business machines corporation
- Kisik Choi of Watervliet NY (US)
- Nicholas Alexander Polomoff of Hopewell Junction NY (US)
- Brent A. Anderson of Jericho VT (US)
- Lawrence A. Clevenger of Saratoga Springs NY (US)
- Ruilong Xie of Niskayuna NY (US)
- Terence Hook of Jericho Center VT (US)
- Matthew Angyal of Stormville NY (US)
- FEE LI Lie of Albany NY (US)
- H01L23/367
- H01L23/00
- H01L23/522
- H01L23/528
- CPC H01L23/367