International business machines corporation (20240164219). FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER simplified abstract
Contents
- 1 FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER
Organization Name
international business machines corporation
Inventor(s)
Matthias Georg Gottwald of Ridgefield CT (US)
Alexander Reznicek of Troy NY (US)
FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240164219 titled 'FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER
Simplified Explanation
The present invention relates to magnetic tunneling junction (MTJ) pillars with a fast-switching material in the magnetic free layer, a magnetic reference layer, and a tunnel barrier layer. A diffusion barrier layer prevents material diffusion, enabling devices with reduced resistance area.
- Magnetic tunneling junction (MTJ) pillars with fast-switching material in the magnetic free layer
- Diffusion barrier layer prevents material diffusion, reducing resistance area
- Use of AlMnGe alloy for magnetic free layer supports higher magnetic orientation switching speeds
Potential Applications
The technology can be applied in:
- Magnetic random-access memory (MRAM)
- Magnetic sensors
- Spintronic devices
Problems Solved
- Reduced resistance area in devices
- Faster magnetic orientation switching speeds
Benefits
- Improved performance in MRAM and magnetic sensors
- Enhanced data storage capabilities
- Increased efficiency in spintronic devices
Potential Commercial Applications
Optimizing MRAM technology for faster and more efficient data storage
Possible Prior Art
Prior art may include research on magnetic tunneling junctions and materials for improving MRAM technology.
Unanswered Questions
How does the AlMnGe alloy compare to other materials for the magnetic free layer in terms of performance and cost?
Answer: Further research and comparative studies are needed to determine the advantages and disadvantages of using AlMnGe alloy compared to other materials for the magnetic free layer.
What are the potential challenges in scaling up the production of devices using this technology for commercial applications?
Answer: The scalability of manufacturing processes and the cost-effectiveness of mass production are important factors to consider when implementing this technology on a larger scale for commercial use.
Original Abstract Submitted
embodiments of the present invention an (or an array of) magnetic tunneling junction (mtj) pillars, each with a magnetic free layer (containing a fast-switching material like aluminum or a metal like gallium), a magnetic reference layer, and a tunnel barrier layer separating the two magnetic layers. a chromium-containing diffusion barrier layer disposed between the magnetic free layer and tunnel barrier layer prevents aluminum (or gallium) diffusion from the magnetic free layer into a tunnel barrier layer of the mtj pillar. devices using and methods of making the fast-switching mtj(s) are also disclosed. the invention enables devices with reduced resistance area (ra). embodiments use a almnge alloy to make the magnetic free layer with a tetragonal crystalline structure and a lower magnetic moment that supports higher magnetic orientation switching speeds.