Intel corporation (20240347465). CONTACT OVER ACTIVE GATE STRUCTURES WITH ETCH STOP LAYERS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
CONTACT OVER ACTIVE GATE STRUCTURES WITH ETCH STOP LAYERS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
Organization Name
Inventor(s)
Atul Madhavan of Portland OR (US)
Nicholas J. Kybert of Portland OR (US)
Mohit K. Haran of Hillsboro OR (US)
Hiten Kothari of Beaverton OR (US)
CONTACT OVER ACTIVE GATE STRUCTURES WITH ETCH STOP LAYERS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347465 titled 'CONTACT OVER ACTIVE GATE STRUCTURES WITH ETCH STOP LAYERS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
Simplified Explanation: The patent application describes contact over active gate (COAG) structures with etch stop layers and methods of fabricating these structures.
- A plurality of gate structures and conductive trench contact structures are arranged above a substrate.
- Each gate structure has a gate insulating layer, while each conductive trench contact structure has a trench insulating layer.
- Etch stop layers are used to protect the gate and trench insulating layers during fabrication.
- The etch stop layers help in the precise formation of interlayer dielectric material on top.
Key Features and Innovation:
- Contact over active gate (COAG) structures with etch stop layers.
- Use of multiple dielectric etch stop layers for protection during fabrication.
- Precise formation of interlayer dielectric material.
Potential Applications:
- Semiconductor manufacturing.
- Integrated circuit fabrication.
Problems Solved:
- Protection of gate and trench insulating layers during fabrication.
- Precise formation of interlayer dielectric material.
Benefits:
- Improved manufacturing process.
- Enhanced reliability of integrated circuits.
Commercial Applications:
- Semiconductor industry applications.
- Potential for increased efficiency in integrated circuit production.
Prior Art: Prior art related to this technology can be found in semiconductor fabrication processes and materials used for etch stop layers.
Frequently Updated Research: Research on advanced semiconductor manufacturing techniques and materials for etch stop layers may be relevant to this technology.
Questions about Contact over Active Gate (COAG) Structures with Etch Stop Layers: 1. What are the key benefits of using etch stop layers in COAG structures? 2. How do etch stop layers contribute to the reliability of integrated circuits?
Original Abstract Submitted
contact over active gate (coag) structures with etch stop layers, and methods of fabricating contact over active gate (coag) structures using etch stop layers, are described. in an example, an integrated circuit structure includes a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon. a plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon. a first dielectric etch stop layer is directly on and continuous over the trench insulating layers and the gate insulating layers. a second dielectric etch stop layer is directly on and continuous over the first dielectric etch stop layer, the second dielectric etch stop layer distinct from the first dielectric etch stop layer. an interlayer dielectric material is on the second dielectric etch stop layer.
