Intel corporation (20240321892). CONSTRAINED EPITAXIAL FORMATION USING DIELECTRIC WALLS simplified abstract
Contents
CONSTRAINED EPITAXIAL FORMATION USING DIELECTRIC WALLS
Organization Name
Inventor(s)
Leonard P. Guler of Hillsboro OR (US)
Glenn Glass of Portland OR (US)
Jessica Panella of Banks OR (US)
Dan S. Lavric of Portland OR (US)
Charles H. Wallace of Portland OR (US)
CONSTRAINED EPITAXIAL FORMATION USING DIELECTRIC WALLS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321892 titled 'CONSTRAINED EPITAXIAL FORMATION USING DIELECTRIC WALLS
The patent application describes techniques for forming semiconductor devices with epitaxial source or drain regions between dielectric walls. In a semiconductor device, the source or drain region is surrounded by dielectric walls on opposite sides, extending through a gate structure over the semiconductor region. A dielectric liner exists between the source or drain region and the dielectric walls, separating it from adjacent regions.
- Semiconductor devices with epitaxial source or drain regions
- Dielectric walls separating source or drain regions
- Dielectric liner between source or drain regions and dielectric walls
- Gate structure over semiconductor region
- Isolation of source or drain regions from adjacent regions
Potential Applications: - Advanced semiconductor manufacturing - High-performance electronic devices - Integrated circuits
Problems Solved: - Improved isolation of source or drain regions - Enhanced performance of semiconductor devices
Benefits: - Increased efficiency in semiconductor manufacturing - Higher performance and reliability of electronic devices
Commercial Applications: Title: "Innovative Semiconductor Device Manufacturing for Enhanced Performance" This technology can be applied in the production of high-performance electronic devices, leading to improved market competitiveness and customer satisfaction.
Prior Art: Researchers can explore prior patents related to semiconductor device manufacturing, epitaxial growth techniques, and dielectric isolation methods to understand the evolution of this technology.
Frequently Updated Research: Researchers are continually exploring new materials and methods to enhance the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in epitaxial growth and dielectric isolation techniques for semiconductor manufacturing.
Questions about Semiconductor Device Manufacturing: 1. How does the use of dielectric walls improve the performance of semiconductor devices? 2. What are the potential challenges in implementing epitaxial source or drain regions in semiconductor manufacturing?
Original Abstract Submitted
techniques to form semiconductor devices having one or more epitaxial source or drain regions formed between dielectric walls that separate each adjacent pair of source or drain regions. in an example, a semiconductor device includes a semiconductor region extending in a first direction from a source or drain region. dielectric walls extend in the first direction adjacent to opposite sides of the source or drain region. the first and second dielectric walls also extend in the first direction through a gate structure present over the semiconductor region. a dielectric liner exists between at least a portion of the first side of the source or drain region and the first dielectric wall and/or at least a portion of the second side of the source or drain region and the second dielectric wall. the dielectric walls may separate the source or drain region from other adjacent source or drain regions.
