Denso corporation (20240243199). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
MASATO Noborio of Nisshin-shi (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240243199 titled 'SEMICONDUCTOR DEVICE
The abstract describes a patent application where impurity regions are formed alternately along a trench, with specific angles between the trench and linear portions of the impurity regions.
- Impurity regions are formed alternately along a trench
- First impurity region has a contact side in contact with the trench
- Second impurity region has a contact side in contact with a second trench adjacent to the first trench
- First linear portion extends from the boundary of the first contact side towards the second trench
- Second linear portion extends from the boundary of the second contact side towards the first trench
- First angle between the first trench and the first linear portion is less than 90°
- Second angle between the second trench and the second linear portion is less than 90°
Potential Applications: - Semiconductor devices - Integrated circuits - Microelectronics
Problems Solved: - Improved impurity region formation - Enhanced device performance
Benefits: - Increased efficiency in semiconductor manufacturing - Enhanced device functionality
Commercial Applications: Title: Advanced Semiconductor Manufacturing Technology Description: This technology can be used in the production of high-performance semiconductor devices, catering to industries such as electronics, telecommunications, and computing.
Questions about the technology: 1. How does the formation of impurity regions impact semiconductor device performance?
- The formation of impurity regions can significantly affect the conductivity and overall functionality of semiconductor devices, leading to improved performance.
2. What are the key advantages of forming impurity regions alternately along a trench?
- Alternately forming impurity regions along a trench allows for precise control over the doping levels in different regions of the semiconductor device, leading to enhanced device performance.
Original Abstract Submitted
a first impurity region and a second impurity region are alternately formed along a longitudinal direction of a first trench. the second impurity region has: a first contact side in contact with the first trench; and a second contact side in contact with a second trench adjacent to the first trench. a first linear portion is defined to extend from a boundary of the first contact side toward the second trench, and a second linear portion is defined to extend from a boundary of the second contact side toward the first trench. a first angle between the first trench and the first linear portion connected to the first contact side is less than 90� and a second angle between the second trench and the second linear portion connected to the second contact side is less than 90� .
