Category:Tomoyuki SASAKI

Tomoyuki SASAKI

Executive Summary

Tomoyuki SASAKI is an inventor who has filed 9 patents. Their primary areas of innovation include Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices (4 patents), Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates (3 patents), {comprising tunnel junctions, e.g. tunnel magnetoresistance sensors} (3 patents), and they have worked with companies such as TDK CORPORATION (9 patents). Their most frequent collaborators include (3 collaborations), (2 collaborations), (2 collaborations).

Patent Filing Activity

Technology Areas

List of Technology Areas

• H10B61/00 (Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices): 4 patents
• H01F10/329 (Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates): 3 patents
• G01R33/098 ({comprising tunnel junctions, e.g. tunnel magnetoresistance sensors}): 3 patents
• G11B5/39 (INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer): 3 patents
• H10N50/85 (No explanation available): 3 patents
• G01R33/091 ({Constructional adaptation of the sensor to specific applications}): 2 patents
• G01R33/093 ({using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films): 2 patents
• G11B2005/3996 (INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer): 2 patents
• H03H2001/0057 (IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (measuring, testing): 2 patents
• H03H7/06 (IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (measuring, testing): 2 patents
• H10N52/85 (No explanation available): 2 patents
• G11C11/18 (STATIC STORES (semiconductor memory devices): 2 patents
• H10N50/01 (No explanation available): 2 patents
• H10N50/10 (No explanation available): 2 patents
• H10N52/80 (No explanation available): 2 patents
• G11C11/161 (using elements in which the storage effect is based on magnetic spin effect): 2 patents
• G11C11/1675 ({Writing or programming circuits or methods}): 2 patents
• H01F10/3254 (Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates): 2 patents
• H10N50/80 (No explanation available): 2 patents
• H01L28/60 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01F17/0013 (Fixed inductances of the signal type  {(coils in general): 1 patents
• H01F27/292 (MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES (ceramics based on ferrites): 1 patents
• H01F2017/0066 (MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES (ceramics based on ferrites): 1 patents
• H10N52/101 (No explanation available): 1 patents
• H10B61/22 (ELECTRONIC MEMORY DEVICES): 1 patents
• G11C11/1659 ({Cell access}): 1 patents
• G11C11/1673 ({Reading or sensing circuits or methods}): 1 patents
• G06N3/063 (using electronic means): 1 patents
• H01L27/228 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L43/02 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L43/08 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01F17/00 (Fixed inductances of the signal type  {(coils in general): 1 patents
• H10N50/20 (No explanation available): 1 patents
• H10N52/00 (No explanation available): 1 patents
• G11C11/1697 ({Power supply circuits}): 1 patents
• H01F10/32 (Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates): 1 patents
• H01L27/105 (including field-effect components): 1 patents
• H01L29/82 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H03B15/00 (Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects): 1 patents
• H03B15/006 (Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects): 1 patents
• H10N52/01 (No explanation available): 1 patents
• H01F10/3286 (Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates): 1 patents

Companies

List of Companies

• TDK CORPORATION: 9 patents

Collaborators

• Katsuyuki NAKADA (3 collaborations)
• Tatsuo SHIBATA (2 collaborations)
• Kazuumi INUBUSHI (2 collaborations)
• Kaito ASAI (1 collaborations)
• Yohei SHIOKAWA (1 collaborations)
• Shogo YAMADA (1 collaborations)
• Keita SUDA (1 collaborations)
• Yukio TERASAKI (1 collaborations)
• Yugo ISHITANI (1 collaborations)