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Category:Shogo Mochizuki of Mechanicville NY (US)
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Pages in category "Shogo Mochizuki of Mechanicville NY (US)"
The following 27 pages are in this category, out of 27 total.
1
- 17541879. SEMICONDUCTOR STRUCTURES WITH LOW TOP CONTACT RESISTANCE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551309. STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL INTEGRATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644463. SIDEWALL EPITAXY ENCAPSULATION FOR NANOSHEET I/O DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808360. SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED PFET AND BOTTOM DIELECTRIC ISOLATION NFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17930706. GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17933882. COMPOSITE NANOSHEET TUNNEL TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17936604. FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL simplified abstract (International Business Machines Corporation)
- 17937955. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)
- 17937967. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)
- 17956918. BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL simplified abstract (International Business Machines Corporation)
- 17960222. STACKED-FET SRAM CELL WITH BOTTOM pFET simplified abstract (International Business Machines Corporation)
- 17994487. SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18045181. FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE simplified abstract (International Business Machines Corporation)
- 18067029. STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH DIFFERENT CHANNEL ORIENTED GATE-ALL-AROUND DEVICES simplified abstract (International Business Machines Corporation)
- 18069077. VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH EPITAXY simplified abstract (International Business Machines Corporation)
I
- International business machines corporation (20240096947). COMPOSITE NANOSHEET TUNNEL TRANSISTORS simplified abstract
- International business machines corporation (20240112985). FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract
- International business machines corporation (20240113176). FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract
- International business machines corporation (20240113192). FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL simplified abstract
- International business machines corporation (20240113193). BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL simplified abstract
- International business machines corporation (20240121933). STACKED-FET SRAM CELL WITH BOTTOM pFET simplified abstract
- International business machines corporation (20240128346). GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS simplified abstract
- International business machines corporation (20240178292). SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS simplified abstract
- International business machines corporation (20240203991). STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH DIFFERENT CHANNEL ORIENTED GATE-ALL-AROUND DEVICES simplified abstract
- International business machines corporation (20240204100). VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH EPITAXY simplified abstract
- International business machines corporation (20240290860). SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEET FIELD EFFECT TRANSISTORS simplified abstract
- International business machines corporation (20240321959). BACKSIDE CONTACT FORMATION simplified abstract