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Category:Ruqiang Bao of Niskayuna NY (US)
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Pages in category "Ruqiang Bao of Niskayuna NY (US)"
The following 17 pages are in this category, out of 17 total.
1
- 17545610. STACKED FETS WITH NON-SHARED WORK FUNCTION METALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644463. SIDEWALL EPITAXY ENCAPSULATION FOR NANOSHEET I/O DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931982. FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17936417. MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract (International Business Machines Corporation)
- 17945422. MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract (International Business Machines Corporation)
- 18070050. NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18078245. ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES simplified abstract (International Business Machines Corporation)
I
- International business machines corporation (20240096887). MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract
- International business machines corporation (20240105769). STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH NANOSHEET LOGIC DEVICE simplified abstract
- International business machines corporation (20240113162). MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract
- International business machines corporation (20240178072). NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS simplified abstract
- International business machines corporation (20240186393). Gate All Around Dual Channel Transistors simplified abstract
- International business machines corporation (20240186394). Gate Dielectric for Bonded Stacked Transistors simplified abstract
- International business machines corporation (20240186401). Replacement Metal Gate Integration for Gate All Around Transistors simplified abstract
- International business machines corporation (20240194670). ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES simplified abstract
- International business machines corporation (20240266409). BACKSIDE CONTACT FORMATION simplified abstract
- International business machines corporation (20240321882). DIFFERENT WORK FUNCTION METALS simplified abstract