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Category:Minhyun Lee of Suwon-si (KR)
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Pages in category "Minhyun Lee of Suwon-si (KR)"
The following 20 pages are in this category, out of 20 total.
1
- 17829679. WIRING INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17967200. TRANSISTOR INCLUDING TWO-DIMENSIONAL (2D) CHANNEL simplified abstract (Samsung Electronics Co., Ltd.)
- 18062245. VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18157478. VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL TYPE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18167354. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18215533. VERTICAL NAND FLASH MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18322365. VERTICAL NAND FLASH MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18328192. NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18335492. VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS simplified abstract (Samsung Electronics Co., Ltd.)
- 18357407. VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18439308. VERTICAL NAND FLASH MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME (Samsung Electronics Co., Ltd.)
- 18441520. FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18483058. TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRUCTURES, ELECTRONIC DEVICES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE ELECTRONIC DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
S
- Samsung electronics co., ltd. (20240096415). VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS simplified abstract
- Samsung electronics co., ltd. (20240186183). FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240215249). VERTICAL NAND FLASH MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240221832). NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240221834). VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240224530). VERTICAL NAND FLASH MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20250017017). VERTICAL NAND FLASH MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
