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Category:Matthew V. Metz of Portland OR (US)
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Pages in category "Matthew V. Metz of Portland OR (US)"
The following 16 pages are in this category, out of 16 total.
1
- 17847625. SPUTTER TARGETS AND SOURCES FOR SELF-DOPED SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17850078. SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHALCOGENIDE GROWTH FOR STACKED 2D CHANNELS simplified abstract (Intel Corporation)
- 17850623. STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED GROWTH simplified abstract (Intel Corporation)
- 17947071. FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPERATING VOLTAGE CAPABILITIES simplified abstract (Intel Corporation)
- 17956296. TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract (Intel Corporation)
- 17958094. TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract (Intel Corporation)
- 17958362. TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS simplified abstract (Intel Corporation)
- 18516595. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP simplified abstract (Intel Corporation)
- 18540544. TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract (Intel Corporation)
I
- Intel corporation (20240105588). INTEGRATED CIRCUIT (IC) DEVICE WITH MULTILAYER METAL LINE simplified abstract
- Intel corporation (20240105810). VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract
- Intel corporation (20240113161). TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract
- Intel corporation (20240113212). TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract
- Intel corporation (20240113220). TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract
- Intel corporation (20240120415). TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS simplified abstract
- Intel corporation (20240186127). SPUTTER TARGETS FOR SELF-DOPED SOURCE AND DRAIN CONTACTS simplified abstract