Category:H01L29/66
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- Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L29/00: Semiconductor devices adapting junction formation for particular applications
- Subgroup H01L29/66: Types of semiconductor device
Classification "H01L29/66" encompasses semiconductor devices, focusing specifically on the types of these devices. It involves various aspects of semiconductor technology, particularly those related to the design, structure, and application of different types of semiconductor devices. This category is significant in the field of electronics, as it covers innovations in semiconductor technology, which are fundamental components in virtually all modern electronic devices. This classification is likely to include advancements in transistor technology, diode variations, integrated circuit designs, and other developments in solid state devices.
Pages in category "H01L29/66"
The following 200 pages are in this category, out of 2,904 total.
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- 17381006. INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSIVATION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17383423. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17383444. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17384092. Dielectric Fin Structures With Varying Height simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17384667. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17412622. DOUBLE-SIDED STACKED DTC STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17450121. VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN simplified abstract (International Business Machines Corporation)
- 17453874. SELF ALIGNED TOP CONTACT FOR VERTICAL TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17453882. GATE-ALL-AROUND NANOSHEET-FET WITH VARIABLE CHANNEL GEOMETRIES FOR PERFORMANCE OPTIMIZATION simplified abstract (International Business Machines Corporation)
- 17455935. PARASITIC CAPACITANCE REDUCTION FOR TALL NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17455937. REDUCED PARASITIC RESISTANCE TWO-DIMENSIONAL MATERIAL FIELD-EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17455941. STACKED NANOSHEET DEVICES WITH MATCHED THRESHOLD VOLTAGES FOR NFET/PFET simplified abstract (International Business Machines Corporation)
- 17457271. INTEGRATION OF HORIZONTAL NANOSHEET DEVICE AND VERTICAL NANO FINS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457588. INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457634. CHANNEL PROTECTION OF GATE-ALL-AROUND DEVICES FOR PERFORMANCE OPTIMIZATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457686. METHOD TO RELEASE NANO SHEET AFTER NANO SHEET FIN RECESS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17458734. Enlarged Backside Contact simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17459855. GATE-ALL-AROUND DEVICES WITH SUPERLATTICE CHANNEL simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17460049. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17460097. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17460213. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461184. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461304. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461578. SOURCE/DRAIN STRUCTURES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17462709. Integrated Circuit Structure with a Reduced Amount of Defects and Methods for Fabricating the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17463123. CHANNEL STRUCTURES FOR SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17463370. FIELD EFFECT TRANSISTOR WITH FIN ISOLATION STRUCTURE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17487301. LATE REPLACEMENT BOTTOM ISOLATION FOR NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17494101. STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17520690. SEMICONDUCTOR DEVICE WITH BOTTOM DIELECTRIC ISOLATION simplified abstract (International Business Machines Corporation)
- 17520812. Area Scaling for VTFET Contacts simplified abstract (International Business Machines Corporation)
- 17521083. Single Process Double Gate and Variable Threshold Voltage MOSFET simplified abstract (International Business Machines Corporation)
- 17522015. BOTTOM CONTACT FOR STACKED GAA FET simplified abstract (International Business Machines Corporation)
- 17524062. VERTICAL TRANSISTORS HAVING IMPROVED CONTROL OF PARASITIC CAPACITANCE AND GATE-TO-CONTACT SHORT CIRCUITS simplified abstract (International Business Machines Corporation)
- 17524851. SHORT GATE ON ACTIVE AND LONGER GATE ON STI FOR NANOSHEETS simplified abstract (International Business Machines Corporation)
- 17528279. TUNNEL FIELD EFFECT TRANSISTOR DEVICES simplified abstract (International Business Machines Corporation)
- 17529115. NANOSHEET REPLACEMENT METAL GATE PATTERNING SCHEME simplified abstract (International Business Machines Corporation)
- 17531966. NON-SELF-ALIGNED WRAP-AROUND CONTACT IN A TIGHT GATE PITCHED TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17536939. MULTI-STACK SEMICONDUCTOR DEVICE WITH ZEBRA NANOSHEET STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17540315. STACKED NANOSHEET TRANSISTOR WITH DEFECT FREE CHANNEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17542322. SUPERCONDUCTOR GATE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17542377. GATE ALL AROUND SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17542485. HIGH ELECTRON MOBILITY TRANSISTOR WITH SOURCE AND DRAIN ELECTRODES BELOW THE CHANNEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17542662. SELECTIVE DIPOLE LAYER MODULATION USING TWO-STEP INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17543028. GATE-ALL-AROUND MONOLITHIC STACKED FIELD EFFECT TRANSISTORS HAVING MULTIPLE THRESHOLD VOLTAGES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17543215. COMPLEMENTARY FIELD EFFECT TRANSISTORS HAVING MULTIPLE VOLTAGE THRESHOLDS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545013. INTEGRATING GATE-CUTS AND SINGLE DIFFUSION BREAK ISOLATION POST-RMG USING LOW-TEMPERATURE PROTECTIVE LINERS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545074. Contact and Isolation in Monolithically Stacked VTFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545574. GATE ALL-AROUND DEVICE WITH THROUGH-STACK NANOSHEET 2D CHANNEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545610. STACKED FETS WITH NON-SHARED WORK FUNCTION METALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545713. NANOSHEET DEVICE WITH AIR-GAPED SOURCE/DRAIN REGIONS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548913. NANOSHEET DEVICE WITH VERTICAL BLOCKER FIN simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550658. GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550724. SEMICONDUCTOR STRUCTURES WITH WRAP-AROUND CONTACT STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551309. STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL INTEGRATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551402. FORMING NS GATES WITH IMPROVED MECHANICAL STABILITY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551463. NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551686. SELF-ALIGNED GATE CONTACT FOR VTFETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551829. ANGLED VIA FOR TIP TO TIP MARGIN IMPROVEMENT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551950. VERTICAL FIELD EFFECT TRANSISTOR WITH MINIMAL CONTACT TO GATE EROSION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17567659. Semiconductor Device and Method of Forming Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17569057. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH EPITAXIAL STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17575147. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17576726. SEMICONDUCTOR DEVICE HAVING HYBRID CHANNEL STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17581787. INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GATE METAL CUT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17585932. SEMICONDUCTOR DIES INCLUDING LOW AND HIGH WORKFUNCTION SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17586310. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17586705. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17587805. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17590863. METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17592995. Fin Field-Effect Transistor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17643362. STACKED FIELD EFFECT TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643553. MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFICIAL OXIDE MATERIAL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644100. SELECTIVE GATE CAP FOR SELF-ALIGNED CONTACTS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644463. SIDEWALL EPITAXY ENCAPSULATION FOR NANOSHEET I/O DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644528. CROSS BAR VERTICAL FETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17648037. Dummy Hybrid Film for Self-Alignment Contact Formation simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17651347. Dual Damascene Structure in Forming Source/Drain Contacts simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17651671. Isolation Layers for Reducing Leakages Between Contacts simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17651721. TRANSISTOR SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17657822. Adjusting the Profile of Source/Drain Regions to Reduce Leakage simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17663278. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17677929. DEVICE WITH ALTERNATE COMPLEMENTARY CHANNELS AND FABRICATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17679465. NANOSHEET TRANSISTOR DEVICES AND RELATED FABRICATION METHODS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17690376. TWO-DIMENSIONAL MATERIAL STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE TWO-DIMENSIONAL MATERIAL STRUCTURE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17691438. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17692369. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17693204. INTEGRATED CIRCUIT WITH NANOSTRUCTURE TRANSISTORS AND BOTTOM DIELECTRIC INSULATORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17699463. FIELD EFFECT TRANSISTOR, ELECTRONIC APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE FIELD EFFECT TRANSISTOR simplified abstract (Samsung Electronics Co., Ltd.)
- 17700998. METAL GATE FIN ELECTRODE STRUCTURE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17703329. Transistor Gate Structures and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17707015. INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT HAVING HETEROGENEOUS GATE STRUCTURES AND METHOD OF FABRICATING INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17716278. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17730797. Semiconductor Devices and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17732811. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17733143. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17739783. Semiconductor Device and Method of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17742943. Transistor Isolation Regions and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17743233. MEMORY DEVICES INCLUDING TRANSISTORS ON MULTIPLE LAYERS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17743849. Semiconductor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17744061. Semiconductor Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17745423. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17748291. TRANSISTOR CAPABLE OF ELECTRICALLY CONTROLLING A THRESHOLD VOLTAGE AND SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17750723. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17766319. VERTICAL FIELD-EFFECT TRANSISTOR AND METHOD FOR FORMING SAME simplified abstract (Robert Bosch GmbH)
- 17771720. METHOD FOR MANUFACTURING DISPLAY SUBSTRATE simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
- 17781773. OXIDE THIN FILM TRANSISTOR AND PREPARATION METHOD THEREOF, AND DISPLAY DEVICE simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
- 17798347. METAL-OXIDE THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, X-RAY DETECTOR, AND DISPLAY PANEL simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
- 17804397. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17804997. SELF-ALIGNED ETCHING TECHNIQUES FOR MEMORY FORMATION simplified abstract (Micron Technology, Inc.)
- 17808124. SUBTRACTIVE SOURCE DRAIN CONTACT FOR STACKED DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808972. MAGNETIC STRUCTURES FOR RESONANT MANIPULATION OF SPIN simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17809025. METAL LAYER PROTECTION DURING WET ETCHING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17809030. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17809099. HIGH-VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF FORMATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17809329. DIFFUSION CUT STRESSORS FOR STACKED TRANSISTORS simplified abstract (Intel Corporation)
- 17815187. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17818933. 2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 17819936. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17823507. FINFET WITH LONG CHANNEL LENGTH STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17825798. Gate Structure Fabrication Techniques for Reducing Gate Structure Warpage simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17827779. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17832609. EPITAXIAL FEATURES IN SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17834694. SEMICONDUCTOR DEVICE WITH FLEXIBLE SHEET STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17836399. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17836452. SELECTIVE ETCHING METHOD AND SEMICONDUCTOR STRUCTURE MANUFACTURED USING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17836463. METHOD FOR FILLING TRENCH IN SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17836628. FIN PROFILE MODULATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837150. UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17837613. SEMICONDUCTOR DEVICE WITH DIELECTRIC LINERS ON GATE REFILL METAL simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17838303. FIN FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17838384. THREE-DIMENSIONAL SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17838646. SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 17846948. MULTILAYER GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17847075. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17847559. GATE ALL AROUND TRANSISTORS ON ALTERNATE SUBSTRATE ORIENTATION simplified abstract (Intel Corporation)
- 17847625. SPUTTER TARGETS AND SOURCES FOR SELF-DOPED SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17847787. METHOD FOR FORMING DUAL SILICIDE IN MANUFACTURING PROCESS OF SEMICONDUCTOR STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17848406. SEMICONDUCTOR DEVICES AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17848605. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849154. DEVICE WITH MODIFIED WORK FUNCTION LAYER AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849207. MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES IN AN INTERCONNECT STACK THEREOF simplified abstract (Intel Corporation)
- 17849608. FERROELECTRIC DEVICE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849639. FORMING A FORKSHEET NANODEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17849720. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849725. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849734. METHOD FOR FORMING SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849739. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850769. FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING COMMON METAL GATES AND HAVING GATE DIELECTRICS WITH AN OPPOSITE POLARITY DIPOLE LAYER simplified abstract (Intel Corporation)
- 17850782. SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY simplified abstract (Intel Corporation)
- 17850811. INTEGRATED CIRCUIT WITH BOTTOM DIELECTRIC INSULATORS AND FIN SIDEWALL SPACERS FOR REDUCING SOURCE/DRAIN LEAKAGE CURRENTS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850845. INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17851960. INTEGRATED CIRCUIT STRUCTURES HAVING AOI GATES WITH ROUTING ACROSS NANOWIRES simplified abstract (Intel Corporation)
- 17851985. INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY WITH BACKSIDE POWER DELIVERY simplified abstract (Intel Corporation)
- 17852658. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17859242. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17864938. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17868401. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17870805. THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR ARRAY SUBSTRATE, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR simplified abstract (Samsung Display Co., Ltd.)
- 17875975. SEMICONDUCTOR DEVICE STRUCTURE WITH NANOSTRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17876465. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17876737. DEVICE WITH TAPERED INSULATION STRUCTURE AND RELATED METHODS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17876920. Thin-Film Transistors For Detecting Miniature Targets simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17879134. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17883736. THICK GATE OXIDE TRANSISTOR DEVICE AND METHOD simplified abstract (Micron Technology, Inc.)
- 17883919. FINFETS WITH REDUCED PARASITICS simplified abstract (Micron Technology, Inc.)
- 17885577. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886145. SEMICONDUCTOR DEVICE HAVING MIXED CMOS ARCHITECTURE AND METHOD OF MANUFACTURING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886215. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886433. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886472. FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886689. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886753. SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886797. SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886876. SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886921. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887194. DEEP TRENCH CAPACITOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887306. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887320. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887487. SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887490. TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887600. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17892864. SEMICONDUCTOR DEVICE WITH REVERSE-CUT SOURCE/DRAIN CONTACT STRUCTURE AND METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17894097. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
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