Category:H01L29/06
- **Section H**: Electricity
- **Class H01**: Basic Electric Elements
- **Subclass H01L**: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- **Main Group H01L29/00**: Semiconductor devices adapting junction formation for particular applications
- **Subgroup H01L29/06**: Active solid-state devices, e.g., transistors, solid-state diodes
- Inventors in H01L29/06:
1. **William Shockley**: Known for the invention of the transistor. 2. **John Bardeen and Walter Brattain**: Co-inventors of the first point-contact transistor.
- Prominent Organizations:
1. **Intel Corporation**: A leader in semiconductor technology, especially in the field of microprocessors. 2. **Samsung Electronics**: Known for large-scale manufacturing and innovation in semiconductors.
- Lesser-Known Organizations:
1. **Micron Technology**: Specializes in memory and storage solutions. 2. **NXP Semiconductors**: Focuses on automotive and embedded processing solutions. 3. **Infineon Technologies**: Known for semiconductor and system solutions addressing automotive, industrial power control, and security applications. 4. **ASM International**: A supplier of semiconductor process equipment for wafer processing.
Pages in category "H01L29/06"
The following 200 pages are in this category, out of 2,310 total.
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- 17381006. INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSIVATION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17384092. Dielectric Fin Structures With Varying Height simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17453882. GATE-ALL-AROUND NANOSHEET-FET WITH VARIABLE CHANNEL GEOMETRIES FOR PERFORMANCE OPTIMIZATION simplified abstract (International Business Machines Corporation)
- 17455935. PARASITIC CAPACITANCE REDUCTION FOR TALL NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17455941. STACKED NANOSHEET DEVICES WITH MATCHED THRESHOLD VOLTAGES FOR NFET/PFET simplified abstract (International Business Machines Corporation)
- 17457271. INTEGRATION OF HORIZONTAL NANOSHEET DEVICE AND VERTICAL NANO FINS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457448. NANOSHEET EPITAXY WITH FULL BOTTOM ISOLATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457588. INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457634. CHANNEL PROTECTION OF GATE-ALL-AROUND DEVICES FOR PERFORMANCE OPTIMIZATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457686. METHOD TO RELEASE NANO SHEET AFTER NANO SHEET FIN RECESS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17459379. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17459855. GATE-ALL-AROUND DEVICES WITH SUPERLATTICE CHANNEL simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17460049. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17460213. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461304. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461578. SOURCE/DRAIN STRUCTURES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17462709. Integrated Circuit Structure with a Reduced Amount of Defects and Methods for Fabricating the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17463123. CHANNEL STRUCTURES FOR SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17463370. FIELD EFFECT TRANSISTOR WITH FIN ISOLATION STRUCTURE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17487301. LATE REPLACEMENT BOTTOM ISOLATION FOR NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17494101. STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17520690. SEMICONDUCTOR DEVICE WITH BOTTOM DIELECTRIC ISOLATION simplified abstract (International Business Machines Corporation)
- 17522015. BOTTOM CONTACT FOR STACKED GAA FET simplified abstract (International Business Machines Corporation)
- 17523711. CLADDING AND CONDENSATION FOR STRAINED SEMICONDUCTOR NANORIBBONS simplified abstract (Intel Corporation)
- 17524851. SHORT GATE ON ACTIVE AND LONGER GATE ON STI FOR NANOSHEETS simplified abstract (International Business Machines Corporation)
- 17528279. TUNNEL FIELD EFFECT TRANSISTOR DEVICES simplified abstract (International Business Machines Corporation)
- 17529115. NANOSHEET REPLACEMENT METAL GATE PATTERNING SCHEME simplified abstract (International Business Machines Corporation)
- 17531966. NON-SELF-ALIGNED WRAP-AROUND CONTACT IN A TIGHT GATE PITCHED TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17536939. MULTI-STACK SEMICONDUCTOR DEVICE WITH ZEBRA NANOSHEET STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17540315. STACKED NANOSHEET TRANSISTOR WITH DEFECT FREE CHANNEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17541879. SEMICONDUCTOR STRUCTURES WITH LOW TOP CONTACT RESISTANCE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17541894. STAGGERED STACKED SEMICONDUCTOR DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17542377. GATE ALL AROUND SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17542662. SELECTIVE DIPOLE LAYER MODULATION USING TWO-STEP INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17543028. GATE-ALL-AROUND MONOLITHIC STACKED FIELD EFFECT TRANSISTORS HAVING MULTIPLE THRESHOLD VOLTAGES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17544328. WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545013. INTEGRATING GATE-CUTS AND SINGLE DIFFUSION BREAK ISOLATION POST-RMG USING LOW-TEMPERATURE PROTECTIVE LINERS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545574. GATE ALL-AROUND DEVICE WITH THROUGH-STACK NANOSHEET 2D CHANNEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545610. STACKED FETS WITH NON-SHARED WORK FUNCTION METALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545713. NANOSHEET DEVICE WITH AIR-GAPED SOURCE/DRAIN REGIONS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17547775. MIDDLE OF LINE STRUCTURE WITH STACKED DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548751. CO-INTEGRATING GATE-ALL-AROUND NANOSHEET TRANSISTORS AND COMB NANOSHEET TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548913. NANOSHEET DEVICE WITH VERTICAL BLOCKER FIN simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550658. GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551402. FORMING NS GATES WITH IMPROVED MECHANICAL STABILITY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551463. NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551829. ANGLED VIA FOR TIP TO TIP MARGIN IMPROVEMENT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.)
- 17567659. Semiconductor Device and Method of Forming Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17569057. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH EPITAXIAL STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17575145. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17576726. SEMICONDUCTOR DEVICE HAVING HYBRID CHANNEL STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17581787. INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GATE METAL CUT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17587805. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17590863. METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17643014. UNIPOLAR-FET IMPLEMENTATION IN STACKED-FET CMOS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643362. STACKED FIELD EFFECT TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643553. MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFICIAL OXIDE MATERIAL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644076. METAL GATE PATTERNING FOR LOGIC AND SRAM IN NANOSHEET DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644463. SIDEWALL EPITAXY ENCAPSULATION FOR NANOSHEET I/O DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17651721. TRANSISTOR SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17657822. Adjusting the Profile of Source/Drain Regions to Reduce Leakage simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17677929. DEVICE WITH ALTERNATE COMPLEMENTARY CHANNELS AND FABRICATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17679465. NANOSHEET TRANSISTOR DEVICES AND RELATED FABRICATION METHODS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17689644. Semiconductor Devices with Uniform Gate Regions simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17693204. INTEGRATED CIRCUIT WITH NANOSTRUCTURE TRANSISTORS AND BOTTOM DIELECTRIC INSULATORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17700998. METAL GATE FIN ELECTRODE STRUCTURE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17707015. INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT HAVING HETEROGENEOUS GATE STRUCTURES AND METHOD OF FABRICATING INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17712319. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17712726. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17716278. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17717268. SEMICONDUCTOR DEVICE INCLUDING AIR GAP simplified abstract (Samsung Electronics Co., Ltd.)
- 17730797. Semiconductor Devices and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17730928. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17731615. SEMICONDUCTOR DEVICES HAVING STRESSED ACTIVE REGIONS THEREIN THAT SUPPORT ENHANCED CARRIER MOBILITY simplified abstract (Samsung Electronics Co., Ltd.)
- 17733143. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17736367. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17742943. Transistor Isolation Regions and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17744061. Semiconductor Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17804397. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17806514. SQUARE-SHAPED CONTACT WITH IMPROVED ELECTRICAL CONDUCTIVITY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808124. SUBTRACTIVE SOURCE DRAIN CONTACT FOR STACKED DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808360. SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED PFET AND BOTTOM DIELECTRIC ISOLATION NFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808566. COMMON SELF ALIGNED GATE CONTACT FOR STACKED TRANSISTOR STRUCTURES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17809099. HIGH-VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF FORMATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17809329. DIFFUSION CUT STRESSORS FOR STACKED TRANSISTORS simplified abstract (Intel Corporation)
- 17815187. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17815854. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17818839. Three-Dimensional Memory Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17818933. 2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 17819482. POWER VIAS FOR BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17822173. STACKED FET SUBSTRATE CONTACT simplified abstract (International Business Machines Corporation)
- 17827779. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17831513. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17832609. EPITAXIAL FEATURES IN SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17836399. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17836463. METHOD FOR FILLING TRENCH IN SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17836628. FIN PROFILE MODULATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837613. SEMICONDUCTOR DEVICE WITH DIELECTRIC LINERS ON GATE REFILL METAL simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837833. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17838551. SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17838637. DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES simplified abstract (Intel Corporation)
- 17838646. SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 17839127. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17846948. MULTILAYER GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17847075. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17847555. MOBILITY IMPROVEMENT IN GATE ALL AROUND TRANSISTORS BASED ON SUBSTRATE ORIENTATION simplified abstract (Intel Corporation)
- 17847559. GATE ALL AROUND TRANSISTORS ON ALTERNATE SUBSTRATE ORIENTATION simplified abstract (Intel Corporation)
- 17847628. LOWER DEVICE ACCESS IN STACKED TRANSISTOR DEVICES simplified abstract (Intel Corporation)
- 17848406. SEMICONDUCTOR DEVICES AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17848660. VARACTOR DEVICE WITH BACKSIDE ELECTRICAL CONTACT simplified abstract (Intel Corporation)
- 17849639. FORMING A FORKSHEET NANODEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17849725. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849739. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850078. SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHALCOGENIDE GROWTH FOR STACKED 2D CHANNELS simplified abstract (Intel Corporation)
- 17850475. CPP-AGNOSTIC SOURCE-DRAIN CONTACT FORMATION FOR GATE-ALL-AROUND DEVICES WITH DIELECTRIC ISOLATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17850623. STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED GROWTH simplified abstract (Intel Corporation)
- 17850769. FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING COMMON METAL GATES AND HAVING GATE DIELECTRICS WITH AN OPPOSITE POLARITY DIPOLE LAYER simplified abstract (Intel Corporation)
- 17850778. INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE POWER STAPLE simplified abstract (Intel Corporation)
- 17850811. INTEGRATED CIRCUIT WITH BOTTOM DIELECTRIC INSULATORS AND FIN SIDEWALL SPACERS FOR REDUCING SOURCE/DRAIN LEAKAGE CURRENTS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850845. INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17851967. INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY WITH BACKSIDE DRAM AND POWER DELIVERY simplified abstract (Intel Corporation)
- 17851979. INTEGRATED CIRCUIT STRUCTURES HAVING INVERTERS WITH CONTACTS BETWEEN NANOWIRES simplified abstract (Intel Corporation)
- 17851985. INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY WITH BACKSIDE POWER DELIVERY simplified abstract (Intel Corporation)
- 17852016. 2D LAYERED GATE OXIDE simplified abstract (Intel Corporation)
- 17852658. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17859242. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17864938. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17868401. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17875975. SEMICONDUCTOR DEVICE STRUCTURE WITH NANOSTRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17879134. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17882169. STACKED STRUCTURE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE STACKED STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17886145. SEMICONDUCTOR DEVICE HAVING MIXED CMOS ARCHITECTURE AND METHOD OF MANUFACTURING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886433. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886689. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886753. SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886797. SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886876. SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886921. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887306. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887487. SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887600. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17894097. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17894169. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896353. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896523. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17897201. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17897648. SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17900001. SEMICONDUCTOR STRUCTURE WITH REDUCED PARASITIC CAPACITANCE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17902111. MULTI BRIDGE CHANNEL FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17930706. GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931319. DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931982. FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932557. HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract (International Business Machines Corporation)
- 17932677. DUAL DIELECTRIC STRESSORS simplified abstract (International Business Machines Corporation)
- 17932679. BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE simplified abstract (International Business Machines Corporation)
- 17932919. SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA simplified abstract (International Business Machines Corporation)
- 17933861. SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW simplified abstract (International Business Machines Corporation)
- 17933882. COMPOSITE NANOSHEET TUNNEL TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17936416. VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract (International Business Machines Corporation)
- 17936417. MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract (International Business Machines Corporation)
- 17936604. FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL simplified abstract (International Business Machines Corporation)
- 17936825. METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN simplified abstract (International Business Machines Corporation)
- 17936934. METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17936965. ESD STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17937212. FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL simplified abstract (Intel Corporation)
- 17937955. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)
- 17937967. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)
- 17940194. EPITAXIAL REGIONS EXTENDING BETWEEN INNER GATE SPACERS simplified abstract (Intel Corporation)
- 17940195. BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION simplified abstract (Intel Corporation)
- 17941248. CONTACT JUMPER FOR NON-SELF ALIGNED CONTACT DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943443. GATE CUTS IN A GRATING PATTERN ACROSS AN INTEGRATED CIRCUIT simplified abstract (Intel Corporation)
- 17943751. HEIGHT CONTROL IN NANOSHEET DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943812. DIODES WITH BACKSIDE CONTACT simplified abstract (Intel Corporation)
- 17943819. WIDE CHANNEL DIODE STRUCTURE INCLUDING SUB-FIN simplified abstract (Intel Corporation)
- 17943840. TRANSISTOR DEVICES WITH INTEGRATED DIODES simplified abstract (Intel Corporation)
- 17945275. STRUCTURE HAVING ENHANCED GATE RESISTANCE simplified abstract (International Business Machines Corporation)
- 17945422. MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract (International Business Machines Corporation)
- 17945467. SEMICONDUCTOR DEVICE WITH GATE STRUCTURE AND CURRENT SPREAD REGION simplified abstract (Infineon Technologies AG)
- 17945528. FERROELECTRIC MATERIAL, AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17945888. HIGH PERFORMANCE 3D COMPACT TRANSISTOR ARCHITECTURE simplified abstract (TOKYO ELECTRON LIMITED)
- 17946002. DIODES IN NANOSHEET TECHNOLOGY simplified abstract (International Business Machines Corporation)
- 17946017. COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 17946546. STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES simplified abstract (International Business Machines Corporation)
- 17946821. SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 17948670. SYSTEMS AND METHODS FOR PILLAR EXTENSION IN TERMINATION AREAS OF WIDE BAND GAP SUPER-JUNCTION POWER DEVICES simplified abstract (GENERAL ELECTRIC COMPANY)
- 17948877. NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS simplified abstract (International Business Machines Corporation)
- 17949861. INTEGRATED CIRCUIT STRUCTURES HAVING GATE CUT PLUG REMOVED FROM TRENCH CONTACT USING ANGLED DIRECTIONAL ETCH simplified abstract (Intel Corporation)
- 17950512. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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