Canon kabushiki kaisha (20240284064). PHOTOELECTRIC CONVERSION DEVICE simplified abstract
Contents
PHOTOELECTRIC CONVERSION DEVICE
Organization Name
Inventor(s)
MAHITO Shinohara of Tokyo (JP)
PHOTOELECTRIC CONVERSION DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240284064 titled 'PHOTOELECTRIC CONVERSION DEVICE
The photoelectric conversion device described in the patent application includes a photoelectric conversion unit with three semiconductor regions forming a p-n junction, and a control circuit for switching the voltage of a reverse bias applied between the first and second semiconductor regions.
- The device switches the reverse bias voltage between two different voltages to accumulate signal charge in the third semiconductor region and enable the transfer of signal charge to the first semiconductor region.
- Avalanche multiplication occurs at the p-n junction during the transfer of signal charge.
- The control circuit changes the reverse bias voltage to a rectangular shape to switch between the two voltages efficiently.
Potential Applications: - Solar panels - Photodetectors - Image sensors
Problems Solved: - Efficient photoelectric conversion - Signal charge accumulation and transfer
Benefits: - Increased efficiency in converting light to electricity - Improved performance in low-light conditions
Commercial Applications: Title: Advanced Photoelectric Conversion Devices for Renewable Energy Solutions This technology can be used in solar panels for residential and commercial buildings, as well as in various electronic devices requiring photoelectric conversion.
Questions about Photoelectric Conversion Devices: 1. How does the control circuit optimize the switching between the two voltages? The control circuit changes the reverse bias voltage to a rectangular shape to efficiently switch between the two voltages.
2. What are the potential commercial applications of this photoelectric conversion device? This technology can be applied in solar panels, photodetectors, and image sensors for various industries.
Original Abstract Submitted
a photoelectric conversion device includes a photoelectric conversion unit including a first semiconductor region, a second semiconductor region, and a third semiconductor region forming a p-n junction with the second semiconductor region, and a control circuit for switching a voltage of a reverse bias voltage applied between the first and the second semiconductor regions between first and second voltages. the photoelectric conversion device performs a period in which the reverse bias voltage is set to the first voltage to accumulate signal charge in the third semiconductor region, and a period in which the reverse bias voltage is set to the second voltage to enable transfer of signal charge to the first semiconductor region, and avalanche multiplication at the p-n junction between the first and second semiconductor regions. the control circuit switches between the first voltage and the second voltage by changing the reverse bias voltage to a rectangular shape.
