Boe technology group co., ltd. (20240194686). THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, DISPLAY PANEL, AND DISPLAY DEVICE simplified abstract
Contents
- 1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, DISPLAY PANEL, AND DISPLAY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, DISPLAY PANEL, AND DISPLAY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Thin Film Transistors
- 1.13 Original Abstract Submitted
THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, DISPLAY PANEL, AND DISPLAY DEVICE
Organization Name
boe technology group co., ltd.
Inventor(s)
THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, DISPLAY PANEL, AND DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194686 titled 'THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, DISPLAY PANEL, AND DISPLAY DEVICE
Simplified Explanation
The patent application describes a thin film transistor and a method for manufacturing it, along with a display panel and a display device. The thin film transistor includes an active layer, source and drain electrodes, and an oxygen supplementation layer. By ensuring that the oxygen supplementation layer overlaps with the active layer, defects in the active layer are reduced, improving the transistor's performance.
- The patent application focuses on a thin film transistor with an oxygen supplementation layer.
- The oxygen supplementation layer overlaps with the active layer, reducing defects in the active layer.
- This design improves the performance of the thin film transistor.
Key Features and Innovation
- Thin film transistor with an oxygen supplementation layer.
- Overlapping of the oxygen supplementation layer with the active layer.
- Reduction of defects in the active layer.
- Improved performance of the thin film transistor.
Potential Applications
The technology can be applied in various display devices such as TVs, monitors, and smartphones.
Problems Solved
The technology addresses the issue of defects in the active layer of thin film transistors, leading to improved performance and reliability.
Benefits
- Enhanced performance of thin film transistors.
- Increased reliability of display devices.
- Improved display quality.
Commercial Applications
- Display panels for TVs, monitors, and smartphones.
- Manufacturing of high-quality display devices.
- Potential applications in the consumer electronics industry.
Prior Art
Prior research on thin film transistors and display technologies can provide additional insights into similar innovations.
Frequently Updated Research
Ongoing research in the field of thin film transistors and display technologies may offer new advancements and applications for this technology.
Questions about Thin Film Transistors
What are the key components of a thin film transistor?
A thin film transistor typically consists of an active layer, source and drain electrodes, and a gate electrode.
How does the oxygen supplementation layer improve the performance of the thin film transistor?
The oxygen supplementation layer helps reduce defects in the active layer, leading to enhanced performance and reliability.
Original Abstract Submitted
provided is a thin film transistor and a method for manufacturing thereof, a display panel, and a display device, which relates to the field of display technologies. the thin film transistor includes an active layer, source and drain electrodes, and an oxygen supplementation layer. as an orthogonal projection of the oxygen supplementation layer on the base substrate is at least partially overlapped with an orthogonal projection of a target portion of the active layer on the base substrate, oxygen introduced in forming the oxygen supplementation layer in the thin film transistor is capable of diffusing to the target portion of the active layer, such that a defect in the target portion of the active layer is reduced, and a property of the thin film transistor is greater.
- Boe technology group co., ltd.
- Nianqi Yao of Beijing (CN)
- Ce Ning of Beijing (CN)
- Zhengliang Li of Beijing (CN)
- Hehe Hu of Beijing (CN)
- Shuilang Dong of Beijing (CN)
- Lizhong Wang of Beijing (CN)
- Dapeng Xue of Beijing (CN)
- Jiayu He of Beijing (CN)
- Jie Huang of Beijing (CN)
- Lubin Shi of Beijing (CN)
- Liping Lei of Beijing (CN)
- H01L27/12
- H01L29/66
- H01L29/786
- CPC H01L27/1225