Applied materials, inc. (20240266146). PLASMA PROCESSING IMPROVEMENT simplified abstract

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PLASMA PROCESSING IMPROVEMENT

Organization Name

applied materials, inc.

Inventor(s)

Christopher S. Olsen of Fremont CA (US)

Rene George of San Carlos CA (US)

Victor Calderon of Sunnyvale CA (US)

PLASMA PROCESSING IMPROVEMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240266146 titled 'PLASMA PROCESSING IMPROVEMENT

The abstract describes a process chamber with a chamber body surrounding a process volume, a substrate support, a plasma source, and a first deflector positioned in the process volume.

  • The process chamber includes a chamber body enclosing a process volume.
  • A substrate support is present within the process volume.
  • A plasma source is located above the substrate support, generating plasma.
  • A first deflector, shaped like an annular body, is positioned in the process volume.
  • The outer side surfaces of the annular body are spaced apart from the interior side walls of the process volume.

Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Surface treatment of materials

Problems Solved: - Enhanced control of plasma distribution - Improved uniformity of thin film coatings - Minimization of particle contamination on substrates

Benefits: - Increased process efficiency - Higher quality thin film coatings - Reduced maintenance requirements

Commercial Applications: Title: Advanced Plasma Processing Chamber for Semiconductor Manufacturing This technology can be utilized in semiconductor fabrication facilities to improve the quality and efficiency of thin film deposition processes. The market implications include enhanced productivity and cost savings for semiconductor manufacturers.

Prior Art: Readers can explore prior research on plasma processing chambers, semiconductor manufacturing equipment, and thin film deposition technologies to gain a deeper understanding of the innovation presented in this patent application.

Frequently Updated Research: Researchers are constantly developing new techniques for plasma processing and thin film deposition, so staying updated on the latest advancements in these fields is crucial for maximizing the benefits of this technology.

Questions about Plasma Processing Chambers: 1. How does the design of the first deflector contribute to improving plasma distribution in the process chamber? 2. What are the key factors to consider when integrating this technology into existing semiconductor manufacturing processes?


Original Abstract Submitted

a process chamber is provided including a chamber body disposed around a process volume, the process volume bounded by one or more interior side walls; a substrate support in the process volume; a plasma source disposed over the substrate support, the plasma source having a top and one or more sides disposed around a plasma-generating volume; and a first deflector positioned at least partially in the process volume, the first deflector comprising an annular body having a top, a bottom, one or more outer side surfaces connecting the top with the bottom, and one or more inner side surfaces connecting the top with the bottom. the one or more outer side surfaces of the annular body are spaced apart from the one or more interior side walls of the process volume.

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