18752170. MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA simplified abstract (International Business Machines Corporation)
Contents
MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA
Organization Name
International Business Machines Corporation
Inventor(s)
Daniel Worledge of San Jose CA (US)
Guohan Hu of Yorktown Heights NY (US)
MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA - A simplified explanation of the abstract
This abstract first appeared for US patent application 18752170 titled 'MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA
Simplified Explanation:
This patent application describes a Magnetoresistive Random Access Memory (MRAM) with enhanced data retention through the use of a temperature-independent Delta in the MTJ pillar.
- The MRAM includes Spin-Transfer Torque (STT) MRAM technology.
- The MTJ pillar is constructed to have a temperature-independent Delta value.
- The Delta value is calculated using the formula Delta=Eb/kt, where Eb is the activation energy, k is Boltzmann's constant, and T is the absolute temperature.
- The application proposes a method for the activation energy (Eb) to increase with temperature, counteracting the effect of the term KT and resulting in a temperature-independent Delta.
Potential Applications:
- Data storage in electronic devices.
- High-speed computing applications.
- Memory modules for IoT devices.
Problems Solved:
- Enhanced data retention in MRAM.
- Improved reliability in memory storage.
- Mitigation of temperature effects on data retention.
Benefits:
- Increased data reliability.
- Improved performance in high-temperature environments.
- Extended lifespan of MRAM technology.
Commercial Applications:
Potential commercial applications include:
- Data centers.
- Automotive electronics.
- Aerospace technology.
Questions about MRAM technology:
1. How does the temperature-independent Delta in the MTJ pillar enhance data retention in MRAM? 2. What are the potential long-term implications of this technology in the semiconductor industry?
Original Abstract Submitted
A magnetoresistive random access memory (MRAM) including spin-transfer torque (STT) MRAM is provided that has enhanced data retention. The enhanced data retention is provided by constructing a MTJ pillar having a temperature-independent Delta, where Delta is Delta=Eb/kt, wherein Eb is the activation energy, k is the Boltzmann's constant, and T is the absolute temperature. Notably, the present application provides a way for EB to actually increase with temperature, which can cancel the effect of the term KT, resulting in a temperature independent Delta.