18675030. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seung Jun Shin of Yongin-si (KR)
Joong Shik Shin of Yongin-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18675030 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract features gate electrodes stacked on a substrate, extending to different lengths in one direction, with subgate electrodes spaced apart in another direction. Channels and dummy channels run through the gate electrodes, including first and second dummy channels arranged in specific patterns.
- Gate electrodes stacked on a substrate
- Subgate electrodes spaced apart in a direction perpendicular to the gate electrodes
- Channels and dummy channels running through the gate electrodes
- Specific arrangement of first and second dummy channels
- Gate connection portions connecting subgate electrodes of the same gate electrode
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronics industry
Problems Solved: - Efficient layout of gate electrodes - Improved connectivity between subgate electrodes - Enhanced performance of semiconductor devices
Benefits: - Higher efficiency in semiconductor manufacturing - Better performance and reliability of integrated circuits - Increased productivity in the electronics industry
Commercial Applications: Title: Advanced Semiconductor Device for Enhanced Performance This technology can be utilized in the production of various semiconductor devices, leading to improved performance and reliability in electronic products. The market implications include increased demand for high-quality integrated circuits and enhanced efficiency in semiconductor manufacturing processes.
Prior Art: Readers can explore prior patents related to semiconductor device manufacturing, gate electrode layouts, and subgate electrode connectivity to gain a deeper understanding of the technological advancements in this field.
Frequently Updated Research: Stay updated on the latest research in semiconductor device manufacturing, gate electrode design, and subgate electrode connectivity to remain informed about the evolving trends and innovations in the industry.
Questions about Semiconductor Device Technology: 1. What are the key advantages of using stacked gate electrodes in semiconductor devices? 2. How do dummy channels contribute to the overall performance of the semiconductor device?
Original Abstract Submitted
A semiconductor device includes gate electrodes stacked along a direction perpendicular to an upper surface of a substrate, the gate electrodes extending to different lengths in a first direction, and each gate electrode including subgate electrodes spaced apart from each other in a second direction perpendicular to the first direction, and gate connection portions connecting subgate electrodes of a same gate electrode of the gate electrodes to each other, channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, and dummy channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, the dummy channels including first dummy channels arranged in rows and columns, and second dummy channels arranged between the first dummy channels in a region including the gate connection portions.
