18671074. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR STORAGE DEVICE
Organization Name
Inventor(s)
Hideto Takekida of Nagoya Aichi (JP)
Yosuke Murakami of Mie Mie (JP)
Keisuke Nakatsuka of Kobe Hyogo (JP)
Yefei Han of Yokkaichi Mie (JP)
SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18671074 titled 'SEMICONDUCTOR STORAGE DEVICE
The semiconductor storage device described in the abstract consists of multiple layers and pillars that work together to store information efficiently.
- The first conductive layer extends in one direction, while the second conductive layer intersects it in another direction.
- A conductive pillar penetrates both layers, providing a pathway for electrical signals.
- A semiconductor layer and a storage layer are positioned in a way that allows for effective storage of data.
- The layers and pillars in the device work together to ensure reliable and efficient data storage.
Potential Applications: This technology can be used in various electronic devices that require semiconductor storage, such as smartphones, computers, and servers.
Problems Solved: This technology addresses the need for reliable and efficient semiconductor storage solutions in electronic devices.
Benefits: The semiconductor storage device offers a compact and efficient way to store data, improving the performance of electronic devices.
Commercial Applications: This technology has significant commercial potential in the electronics industry, where reliable data storage is crucial for the performance of various devices.
Questions about Semiconductor Storage Devices: 1. How does this semiconductor storage device compare to traditional storage solutions?
- This semiconductor storage device offers a more compact and efficient way to store data compared to traditional solutions.
2. What are the key advantages of using this semiconductor storage device in electronic devices?
- The key advantages include improved data storage efficiency and reliability, leading to better overall device performance.
Original Abstract Submitted
A semiconductor storage device of an embodiment includes a first conductive layer, a second conductive layer, a first conductive pillar, a first semiconductor layer, and a first storage layer. The first conductive layer extends in a first direction. The second conductive layer is along the first conductive layer in a third direction intersecting the first direction. The second conductive layer extends in the first direction. The first conductive pillar penetrates the first conductive layer and the second conductive layer in the third direction. The first semiconductor layer is in contact with the first conductive layer and the second conductive layer. The first semiconductor layer faces the first conductive pillar in the first direction. The first storage layer is between the first semiconductor layer and the first conductive pillar.
