18664117. SEMICONDUCTOR DEVICE simplified abstract (Renesas Electronics Corporation)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Renesas Electronics Corporation
Inventor(s)
Yasutaka Nakashiba of Tokyo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18664117 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a semiconductor substrate, a buried insulating film, a first conductive film, an insulating layer, a first contact, and a second contact. The semiconductor substrate consists of a first semiconductor region with a first conductive type and a second semiconductor region with a second conductive type. The buried insulating film surrounds the second semiconductor region in plan view. The first conductive film makes direct contact with both the first and second semiconductor regions. The first and second contacts overlap with the second semiconductor region in plan view and extend to the first conductive film. The first contact is positioned adjacent to the second contact along a first side of the second semiconductor region in plan view. In a direction along the first side, the distance between the second semiconductor region and the buried insulating film is greater than the distance between the first contact and the second contact.
- The semiconductor device features a unique structure with a buried insulating film surrounding the second semiconductor region.
- Direct contact between the first conductive film and both semiconductor regions enhances performance.
- The positioning of the first and second contacts optimizes connectivity and efficiency.
- The specific distances between components contribute to the overall functionality of the device.
- This semiconductor device design offers potential improvements in performance and reliability.
- Potential Applications:**
- This technology could be utilized in the development of advanced electronic devices. - It may find applications in the semiconductor industry for improved integrated circuits.
- Problems Solved:**
- Enhances performance and connectivity in semiconductor devices. - Optimizes the structure for better efficiency and reliability.
- Benefits:**
- Improved performance and reliability in semiconductor devices. - Enhanced connectivity and efficiency. - Potential for advancements in electronic device technology.
- Commercial Applications:**
Potential commercial applications of this technology could include the development of high-performance integrated circuits for various electronic devices. The market implications could involve increased efficiency and reliability in semiconductor devices, leading to improved consumer electronics products.
- Questions about Semiconductor Device Technology:**
1. What are the key features of the semiconductor device described in the abstract?
- The key features include a unique structure with a buried insulating film, direct contact between the first conductive film and semiconductor regions, optimized positioning of contacts, and specific distances between components for enhanced functionality.
2. How does this semiconductor device design contribute to advancements in electronic devices?
- This design enhances performance, connectivity, and efficiency in semiconductor devices, potentially leading to improved electronic products in various industries.
Original Abstract Submitted
A semiconductor device includes a semiconductor substrate, a buried insulating film, a first conductive film, an insulating layer, a first contact and a second contact. The semiconductor substrate includes a first semiconductor region having a first conductive type and a second semiconductor region having a second conductive type. The buried insulating film surrounds the second semiconductor region in plan view. The first conductive film directly contacts with the first and second semiconductor regions. The first and second contacts overlap with the second semiconductor region in plan view and reach the first conductive film. The first contact is adjacent to the second contact along a first side of the second semiconductor region in plan view. In a direction along the first side, a first distance between the second semiconductor region and the buried insulating film is greater than a second distance between the first contact and the second contact.
