18661171. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Seo Jin Jeong of Incheon (KR)

Do Hyun Go of Hwaseong-si (KR)

Seok Hoon Kim of Suwon-si (KR)

Jung Taek Kim of Yongin-si (KR)

Pan Kwi Park of Incheon (KR)

Moon Seung Yang of Hwaseong-si (KR)

Min-Hee Choi of Suwon-si (KR)

Ryong Ha of Seoul (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18661171 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract includes an active pattern with a lower pattern and multiple sheet patterns, a gate structure surrounding the sheet patterns, and a source/drain pattern filling a source/drain recess next to the gate structure. The source/drain pattern consists of three semiconductor patterns, with the third pattern extending below the lowermost sheet pattern and featuring a planar portion on its side surface.

• The semiconductor device features an innovative source/drain pattern design with multiple semiconductor patterns.
• The third semiconductor pattern extends below the lowermost sheet pattern, optimizing the device's performance.
• The side surface of the third semiconductor pattern includes a planar portion, enhancing the device's functionality.
• The thickness of the second semiconductor pattern varies on different surfaces of the third semiconductor pattern, improving the device's efficiency.
• The gate structure and source/drain pattern configuration contribute to the overall performance and functionality of the semiconductor device.

Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications. - It can be used in the development of high-performance integrated circuits and microprocessors.

Problems Solved: - Enhances the performance and efficiency of semiconductor devices. - Optimizes the design of source/drain patterns for improved functionality.

Benefits: - Improved performance and efficiency of semiconductor devices. - Enhanced functionality and reliability of integrated circuits. - Potential cost savings in semiconductor manufacturing processes.

Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices, such as smartphones, computers, and other consumer electronics. The innovation can also benefit the semiconductor industry by improving the efficiency and functionality of integrated circuits, leading to enhanced product performance and reliability.

Prior Art: Further research can be conducted in the field of semiconductor device design and manufacturing processes to explore similar innovations and advancements in source/drain pattern configurations.

Frequently Updated Research: Researchers are continuously exploring new techniques and materials to enhance the performance and efficiency of semiconductor devices. Stay updated on the latest developments in semiconductor technology to leverage cutting-edge advancements in the industry.

Questions about Semiconductor Device Technology: 1. How does the innovative source/drain pattern design impact the overall performance of the semiconductor device? 2. What are the potential applications of this technology in the semiconductor industry and electronic device manufacturing?

Original Abstract Submitted

A semiconductor device includes an active pattern including a lower pattern and a plurality of sheet patterns; a gate structure disposed on the lower pattern and surrounding the plurality of sheet patterns; and a source/drain pattern filling a source/drain recess formed on one side of the gate structure. The source/drain pattern includes a first semiconductor pattern extending along the source/drain recess and contacting the lower pattern, a second and third semiconductor patterns sequentially disposed on the first semiconductor pattern, a lower surface of the third semiconductor pattern is disposed below a lower surface of a lowermost sheet pattern, a side surface of the third semiconductor pattern includes a planar portion, and a thickness of the second semiconductor pattern on the lower surface of the third semiconductor pattern is different from a thickness of the second semiconductor pattern on the planar portion of the side surface of the third semiconductor pattern.