18654302. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
Contents
MEMORY SYSTEM
Organization Name
Inventor(s)
Hiroyuki Nagashima of Yokohama-shi (JP)
MEMORY SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18654302 titled 'MEMORY SYSTEM
Simplified Explanation: The patent application describes a memory system that includes a nonvolatile semiconductor memory device, a voltage generation unit, and a control unit. The memory device has memory cell arrays with blocks containing multiple memory cells, and the voltage generation unit can adjust the read level of the memory cell. The control unit manages the read, write, and erase operations of the memory device, including changing the read level over time.
- The memory system includes a nonvolatile semiconductor memory device with memory cell arrays and a voltage generation unit.
- The voltage generation unit can modify the read level of the memory cell, enhancing data storage and retrieval.
- The control unit oversees the operations of the memory device, such as read, write, and erase functions.
- The read level can be adjusted at different times, improving the efficiency and performance of the memory system.
- The technology aims to optimize the memory system's functionality and reliability over time.
Potential Applications: 1. Data storage devices 2. Embedded systems 3. Consumer electronics 4. Automotive applications 5. Industrial control systems
Problems Solved: 1. Enhancing data storage efficiency 2. Improving memory system performance 3. Increasing reliability of nonvolatile memory devices 4. Optimizing read level adjustments over time 5. Enhancing overall system functionality
Benefits: 1. Improved data storage and retrieval speed 2. Enhanced system performance and reliability 3. Optimized memory management 4. Extended lifespan of memory devices 5. Increased efficiency in data processing
Commercial Applications: Title: Advanced Memory Systems for Enhanced Data Storage This technology can be utilized in various commercial applications such as data centers, IoT devices, and smart appliances. The improved performance and reliability of memory systems can lead to better user experiences and increased product competitiveness in the market.
Questions about Memory Systems: 1. How does the read level adjustment impact the overall performance of the memory system? 2. What are the potential long-term benefits of optimizing memory management in nonvolatile semiconductor memory devices?
Original Abstract Submitted
According to one embodiment, a memory system includes a nonvolatile semiconductor memory device, a voltage generation unit and a control unit. The nonvolatile semiconductor memory device includes a memory cell array having a plurality of blocks each including a plurality of memory cells, and a voltage generation unit configured to change a read level of the memory cell. The control unit controls write, read, and erase of the nonvolatile semiconductor memory device. The control unit changes the read level between a start of use of the nonvolatile semiconductor memory device and a timing after an elapse of a time.
