18653339. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shinya Umeki of Kyoto-shi (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18653339 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a semiconductor layer with opposing first and second principal surfaces, an IGBT region, a diode region adjacent to the IGBT region, and a first impurity region of a first conductivity type within the semiconductor layer.
- The semiconductor device features a semiconductor layer with distinct regions for IGBT and diode functionalities.
- The first impurity region is strategically placed inside the semiconductor layer to enhance the device's performance.
- The device is designed to optimize power efficiency and switching capabilities in various applications.
- By integrating different regions within the semiconductor layer, the device offers improved functionality and reliability.
- The innovative design of the semiconductor device aims to enhance overall performance and efficiency in power electronics applications.
Potential Applications: - Power electronics - Renewable energy systems - Electric vehicles - Industrial automation - Consumer electronics
Problems Solved: - Enhanced power efficiency - Improved switching capabilities - Increased reliability in semiconductor devices
Benefits: - Higher performance levels - Greater energy efficiency - Enhanced reliability and durability - Improved overall functionality in power electronics applications
Commercial Applications: Title: Advanced Semiconductor Device for Power Electronics Applications This technology can be utilized in various commercial sectors such as renewable energy systems, electric vehicles, industrial automation, and consumer electronics. The enhanced performance and efficiency offered by this semiconductor device make it a valuable asset in the power electronics industry.
Questions about Semiconductor Devices: 1. How does the integration of different regions within the semiconductor layer improve device performance?
- The integration of distinct regions such as the IGBT and diode regions allows for optimized power efficiency and switching capabilities, enhancing overall device performance.
2. What are the potential applications of semiconductor devices with advanced features like the ones described in the abstract?
- Semiconductor devices with advanced features can be applied in power electronics, renewable energy systems, electric vehicles, industrial automation, and consumer electronics, among other sectors.
Original Abstract Submitted
Provided is a semiconductor device including a semiconductor layer which has opposing first and second principal surfaces, an IGBT region which is formed in the semiconductor layer, a diode region which is formed in the semiconductor layer and adjacent to the IGBT region, a first impurity region of a first conductivity type which is formed inside the semiconductor layer.
