18652868. PASSIVATION SCHEME FOR PAD OPENINGS AND TRENCHES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

PASSIVATION SCHEME FOR PAD OPENINGS AND TRENCHES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Ming-Hong Chang of Hsin-Chu (TW)

Chun-Yi Yang of Hsinchu City (TW)

Kun-Ming Huang of Taipei City (TW)

Po-Tao Chu of New Taipei City (TW)

Shen-Ping Wang of Keelung City (TW)

Chien-Li Kuo of Hsinchu City (TW)

PASSIVATION SCHEME FOR PAD OPENINGS AND TRENCHES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18652868 titled 'PASSIVATION SCHEME FOR PAD OPENINGS AND TRENCHES

The abstract describes an integrated circuit (IC) with an enhanced passivation scheme for pad openings and trenches. The IC includes an interlayer dielectric (ILD) layer covering a substrate, a trench defined in part by the ILD layer, a conductive pad overlying the ILD layer, and passivation layers that protect the pad and trench.

• The IC features a first passivation layer that defines a pad opening over the conductive pad.
• A second passivation layer lines the sidewalls of the first passivation layer in the pad opening and the sidewalls of the ILD layer in the trench.
• The second passivation layer has low permeability for moisture or vapor compared to the ILD layer.

Potential Applications: - Semiconductor manufacturing - Electronic device production - Microchip fabrication

Problems Solved: - Enhanced protection for pad openings and trenches - Improved moisture resistance - Increased reliability of ICs

Benefits: - Enhanced durability - Improved performance in harsh environments - Extended lifespan of electronic devices

Commercial Applications: Title: Enhanced Passivation Scheme for ICs This technology can be utilized in the production of various electronic devices, such as smartphones, computers, and automotive electronics. It can also benefit semiconductor manufacturers looking to improve the reliability and longevity of their products.

Questions about Enhanced Passivation Scheme for ICs: 1. How does the second passivation layer improve moisture resistance in the IC? The second passivation layer has low permeability for moisture or vapor, providing enhanced protection for the conductive pad and trench. 2. What are the potential long-term benefits of implementing this enhanced passivation scheme in IC manufacturing? By improving moisture resistance and overall durability, this technology can lead to longer-lasting electronic devices and increased reliability in various applications.

Original Abstract Submitted

An integrated circuit (IC) comprising an enhanced passivation scheme for pad openings and trenches is provided. In some embodiments, an interlayer dielectric (ILD) layer covers a substrate and at least partially defines a trench. The trench extends through the ILD layer from a top of the ILD layer to the substrate. A conductive pad overlies the ILD layer. A first passivation layer overlies the ILD layer and the conductive pad, and further defines a pad opening overlying the conductive pad. A second passivation layer overlies the ILD layer, the conductive pad, and the first passivation layer, and further lines sidewalls of the first passivation layer in the pad opening and sidewalls of the ILD layer in the trench. Further, the second passivation layer has a low permeability for moisture or vapor relative to the ILD layer.