18649389. CONFORMAL LOW TEMPERATURE HERMETIC DIELECTRIC DIFFUSION BARRIERS simplified abstract (Intel Corporation)
Contents
- 1 CONFORMAL LOW TEMPERATURE HERMETIC DIELECTRIC DIFFUSION BARRIERS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CONFORMAL LOW TEMPERATURE HERMETIC DIELECTRIC DIFFUSION BARRIERS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Questions about Conformal Hermetic Dielectric Films
- 1.11 Original Abstract Submitted
CONFORMAL LOW TEMPERATURE HERMETIC DIELECTRIC DIFFUSION BARRIERS
Organization Name
Inventor(s)
Sean King of Beaverton OR (US)
Hui Jae Yoo of Portland OR (US)
Sreenivas Kosaraju of Portland OR (US)
Timothy Glassman of Portland OR (US)
CONFORMAL LOW TEMPERATURE HERMETIC DIELECTRIC DIFFUSION BARRIERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18649389 titled 'CONFORMAL LOW TEMPERATURE HERMETIC DIELECTRIC DIFFUSION BARRIERS
Simplified Explanation
The patent application describes conformal hermetic dielectric films that can be used as diffusion barriers over 3D topography. These films are deposited using advanced techniques to achieve better conformality and density compared to traditional silicon dioxide-based films.
- These dielectric diffusion barriers are made of a high-k dielectric layer and a low-k or intermediate-k layer to reduce the dielectric constant.
- The use of metal silicates in the diffusion barrier helps lower the k-value by adjusting the silicon content while maintaining film conformality and density.
Key Features and Innovation
- Conformal hermetic dielectric films for use as diffusion barriers over 3D topography.
- Deposition using atomic layer deposition (ALD) techniques for superior conformality and density.
- Multi-layered films with high-k and low-k or intermediate-k layers to reduce dielectric constant.
- Use of metal silicates to adjust the k-value of the diffusion barrier.
Potential Applications
The technology can be applied in semiconductor manufacturing, microelectronics, and other industries requiring precise control over diffusion barriers in complex structures.
Problems Solved
- Improved conformality and density compared to traditional silicon dioxide-based films.
- Reduction of dielectric constant in diffusion barriers.
- Enhanced hermetic properties for better protection against diffusion.
Benefits
- Enhanced performance in preventing diffusion in complex 3D structures.
- Improved reliability and longevity of electronic devices.
- Potential for smaller, more efficient electronic components.
Commercial Applications
The technology has potential commercial applications in semiconductor fabrication, integrated circuits, microelectromechanical systems (MEMS), and other industries requiring advanced dielectric diffusion barriers.
Questions about Conformal Hermetic Dielectric Films
How do conformal hermetic dielectric films differ from traditional silicon dioxide-based films in terms of performance and application?
Conformal hermetic dielectric films offer superior conformality and density, making them more effective as diffusion barriers over 3D topography compared to traditional silicon dioxide-based films. They also have a lower dielectric constant, improving overall performance in electronic devices.
What industries can benefit the most from the use of conformal hermetic dielectric films as diffusion barriers?
Industries such as semiconductor manufacturing, microelectronics, and MEMS can benefit significantly from the use of conformal hermetic dielectric films as diffusion barriers due to their advanced properties and performance advantages.
Original Abstract Submitted
Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.
