18648971. BONDED SEMICONDUCTOR DEVICES HAVING PROCESSOR AND DYNAMIC RANDOM-ACCESS MEMORY AND METHODS FOR FORMING THE SAME simplified abstract (Yangtze Memory Technologies Co., LTD.)
BONDED SEMICONDUCTOR DEVICES HAVING PROCESSOR AND DYNAMIC RANDOM-ACCESS MEMORY AND METHODS FOR FORMING THE SAME
Organization Name
Yangtze Memory Technologies Co., LTD.
Inventor(s)
BONDED SEMICONDUCTOR DEVICES HAVING PROCESSOR AND DYNAMIC RANDOM-ACCESS MEMORY AND METHODS FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18648971 titled 'BONDED SEMICONDUCTOR DEVICES HAVING PROCESSOR AND DYNAMIC RANDOM-ACCESS MEMORY AND METHODS FOR FORMING THE SAME
The semiconductor device described in the patent application consists of two main semiconductor structures bonded together, each with different types of memory cells and bonding layers.
- The first semiconductor structure includes a processor, an array of static random-access memory (SRAM) cells, and a first bonding layer with bonding contacts and a dielectric layer.
- The second semiconductor structure includes an array of dynamic random-access memory (DRAM) cells and a second bonding layer with bonding contacts and a dielectric layer.
- The first bonding layer is bonded to the second bonding layer, connecting the two semiconductor structures.
- The bonding contacts of the first semiconductor structure are in contact with the bonding contacts of the second semiconductor structure.
Potential Applications: - This technology could be used in various electronic devices that require both SRAM and DRAM memory capabilities. - It could be beneficial in applications where fast and efficient memory access is crucial, such as in high-performance computing systems.
Problems Solved: - The technology addresses the need for a semiconductor device that combines different types of memory cells in a compact and efficient manner. - It solves the challenge of integrating SRAM and DRAM functionalities in a single device seamlessly.
Benefits: - Improved memory performance and efficiency. - Enhanced overall functionality of electronic devices. - Simplified design and integration process for semiconductor devices.
Commercial Applications: Title: Integration of SRAM and DRAM Memory Cells in Semiconductor Devices This technology has potential commercial applications in the development of advanced computing systems, mobile devices, and other electronic products requiring high-speed memory access.
Questions about the Integration of SRAM and DRAM Memory Cells in Semiconductor Devices: 1. How does the bonding of the first and second semiconductor structures improve memory performance? 2. What are the key differences between SRAM and DRAM memory cells in terms of functionality and usage?
Original Abstract Submitted
A semiconductor device includes a first semiconductor structure including a processor, an array of static random-access memory (SRAM) cells, and a first bonding layer including first bonding contacts and a first dielectric layer isolating the first bonding contacts. The semiconductor device also includes a second semiconductor structure including an array of dynamic random-access memory (DRAM) cells and a second bonding layer including second bonding contacts and a second dielectric layer isolating the second bonding contacts. The first bonding layer is bonded to the second bonding layer. The first bonding contacts of the first semiconductor structure are in contact with the second bonding contacts of the second semiconductor structure.
