18642173. BUMP STRUCTURE AND METHOD OF MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
BUMP STRUCTURE AND METHOD OF MAKING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wen-Hsiung Lu of Tainan City (TW)
Chien-Pin Chan of Pingzhen City (TW)
Yung-Sheng Lin of Hsinchu (TW)
BUMP STRUCTURE AND METHOD OF MAKING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18642173 titled 'BUMP STRUCTURE AND METHOD OF MAKING THE SAME
Simplified Explanation: The patent application describes a method of manufacturing a semiconductor device involving the formation of conductive layers, etching to create patterns, and the formation of a bump structure.
- First conductive layers are formed over a substrate.
- A first photoresist layer is formed over the first conductive layers.
- The first conductive layers are etched using the first photoresist layer as a mask to create patterns.
- A connection pattern is formed to connect the different patterns.
- Second conductive layers are formed on the patterns.
- A bump structure is formed by removing the photoresist layer and the connection pattern.
Key Features and Innovation:
- Utilizes photoresist layers for etching and patterning.
- Creates a bump structure for semiconductor devices.
- Enables the formation of intricate patterns on conductive layers.
Potential Applications:
- Semiconductor manufacturing industry.
- Electronics and microelectronics production.
- Integrated circuit fabrication.
Problems Solved:
- Efficient patterning of conductive layers.
- Formation of complex structures in semiconductor devices.
- Improved connectivity in electronic components.
Benefits:
- Enhanced precision in semiconductor manufacturing.
- Increased functionality of electronic devices.
- Streamlined production processes.
Commercial Applications:
- Semiconductor fabrication companies.
- Electronics manufacturers.
- Research institutions in the field of microelectronics.
Questions about Semiconductor Device Manufacturing: 1. How does the method described in the patent application improve the efficiency of semiconductor device manufacturing? 2. What are the potential implications of using bump structures in semiconductor devices?
Frequently Updated Research: Ongoing research in semiconductor manufacturing techniques and materials could further enhance the methods described in the patent application.
Original Abstract Submitted
In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.
