18640528. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Potential Applications
- 1.5 Problems Solved
- 1.6 Benefits
- 1.7 Commercial Applications
- 1.8 Prior Art
- 1.9 Frequently Updated Research
- 1.10 Questions about Semiconductor Device Integration
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yoo-Cheol Shin of Suwon-si (KR)
Young-Woo Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18640528 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, an upper interconnection layer on the memory cell array region, and a vertical contact through the memory cell array region and the polysilicon layer, connecting the upper interconnection layer to the peripheral circuit region.
- The device features a unique vertical contact structure that allows for efficient connection between the memory cell array region and the peripheral circuit region.
- The memory cell array region is positioned on top of the peripheral circuit region, optimizing space utilization on the substrate.
- The use of a polysilicon layer enhances the performance and functionality of the device.
- The upper interconnection layer facilitates communication between different regions of the device.
- Overall, the device design enables effective integration of peripheral circuits and memory cell arrays in a compact layout.
Potential Applications
The semiconductor device with this innovative design could be used in various electronic devices such as smartphones, tablets, and computers. It can also be applied in embedded systems, automotive electronics, and IoT devices.
Problems Solved
This technology addresses the challenge of efficiently connecting peripheral circuits and memory cell arrays in a semiconductor device. It also solves the issue of limited space on the substrate by overlapping the memory cell array region with the peripheral circuit region.
Benefits
Improved performance and functionality of semiconductor devices. Optimized space utilization on the substrate. Enhanced communication between different regions of the device. Cost-effective manufacturing process.
Commercial Applications
Title: Advanced Semiconductor Device for Efficient Integration This technology can be commercially used in the production of consumer electronics, industrial equipment, and communication devices. It offers a competitive advantage in the semiconductor market by providing a more efficient and compact design for electronic devices.
Prior Art
Readers interested in exploring prior art related to this technology can start by researching semiconductor device designs with vertical contacts and integrated memory cell arrays.
Frequently Updated Research
Researchers are continually exploring new materials and manufacturing techniques to further enhance the performance and efficiency of semiconductor devices with integrated circuits and memory arrays.
Questions about Semiconductor Device Integration
1. How does the vertical contact structure improve the connectivity between different regions of the semiconductor device? 2. What are the key advantages of overlapping the memory cell array region with the peripheral circuit region in terms of device performance and space utilization?
Original Abstract Submitted
A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, the peripheral circuit region being under the memory cell array region, an upper interconnection layer on the memory cell array region, and a vertical contact through the memory cell array region and the polysilicon layer, the vertical contact connecting the upper interconnection layer to the peripheral circuit region.
