18634287. PHOTOELECTRIC CONVERSION APPARATUS AND PHOTOELECTRIC CONVERSION SYSTEM simplified abstract (CANON KABUSHIKI KAISHA)

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PHOTOELECTRIC CONVERSION APPARATUS AND PHOTOELECTRIC CONVERSION SYSTEM

Organization Name

CANON KABUSHIKI KAISHA

Inventor(s)

DAIKI Shirahige of Kanagawa (JP)

PHOTOELECTRIC CONVERSION APPARATUS AND PHOTOELECTRIC CONVERSION SYSTEM - A simplified explanation of the abstract

This abstract first appeared for US patent application 18634287 titled 'PHOTOELECTRIC CONVERSION APPARATUS AND PHOTOELECTRIC CONVERSION SYSTEM

Simplified Explanation

The photoelectric conversion apparatus described in the patent application consists of different semiconductor regions arranged in a specific configuration to enhance photoelectric conversion efficiency.

Key Features and Innovation

  • The apparatus includes a first, second, third, and fourth semiconductor region with varying impurity concentrations.
  • A transport path overlaps with the first and second semiconductor regions in a planar view.
  • The fourth semiconductor region overlaps with at least a part of the transport path.
  • The first semiconductor region is divided by a virtual line into two halves, with one half longer than the other.
  • The virtual line does not overlap with the transport path.

Potential Applications

This technology can be used in solar panels, photodetectors, and other devices that require efficient photoelectric conversion.

Problems Solved

This technology addresses the need for improved photoelectric conversion efficiency in semiconductor devices.

Benefits

  • Enhanced photoelectric conversion efficiency
  • Improved performance of semiconductor devices
  • Potential for increased energy savings in applications like solar panels

Commercial Applications

  • Solar panel technology
  • Photodetectors for various industries
  • Semiconductor devices for electronics and telecommunications markets

Questions about Photoelectric Conversion Apparatus

How does the impurity concentration in different semiconductor regions affect photoelectric conversion efficiency?

The impurity concentration in the semiconductor regions influences the conductivity and charge carrier mobility, impacting the overall efficiency of photoelectric conversion.

What is the significance of the virtual line dividing the first semiconductor region in the apparatus?

The virtual line helps optimize the distribution of charge carriers within the semiconductor regions, contributing to improved photoelectric conversion performance.


Original Abstract Submitted

A photoelectric conversion apparatus includes a first semiconductor region, a second semiconductor region, a third semiconductor region between the first and second semiconductor regions, and a fourth semiconductor region at a depth where the first semiconductor region is arranged and has a lower impurity concentration than an impurity concentration of the first semiconductor region. The photoelectric conversion apparatus includes a transport path that overlaps with the first semiconductor region and the second semiconductor region in a planar view. The fourth semiconductor region overlaps with at least a part of the transport path. In the planar view, the first semiconductor region has a first length and a second length longer than the first length. A virtual line that divides the first semiconductor region into two halves in the first direction and extends in the second direction is arranged so as not to overlap with the transport path.