18634014. DEVICE INCLUDING FIRST STRUCTURE HAVING PERIPHERAL CIRCUIT AND SECOND STRUCTURE HAVING GATE LAYERS simplified abstract (Samsung Electronics Co., Ltd.)
Contents
DEVICE INCLUDING FIRST STRUCTURE HAVING PERIPHERAL CIRCUIT AND SECOND STRUCTURE HAVING GATE LAYERS
Organization Name
Inventor(s)
Seungwoo Paek of Yongin-si (KR)
Sangjun Park of Yongin-si (KR)
Sungdong Cho of Hwaseong-si (KR)
DEVICE INCLUDING FIRST STRUCTURE HAVING PERIPHERAL CIRCUIT AND SECOND STRUCTURE HAVING GATE LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18634014 titled 'DEVICE INCLUDING FIRST STRUCTURE HAVING PERIPHERAL CIRCUIT AND SECOND STRUCTURE HAVING GATE LAYERS
The abstract describes a device with multiple structures and layers, including insulating structures, junction pads, conductive patterns, and a vertical structure with a data storage structure and a channel layer.
- The device includes a substrate with peripheral circuits and junction pads.
- Insulating structures surround the junction pads to prevent interference.
- Additional junction pads make contact with the first set.
- Layers of insulating, passivation, and barrier materials protect the device.
- Conductive patterns are spaced within the upper insulating structure.
- Various pattern and stack structures house gate layers and other components.
- A vertical structure contains a data storage structure and a channel layer.
Potential Applications: - This technology could be used in semiconductor devices, memory storage, and integrated circuits.
Problems Solved: - The device addresses issues related to interference, protection, and efficient data storage.
Benefits: - Improved performance and reliability of semiconductor devices. - Enhanced data storage capabilities in a compact design.
Commercial Applications: - This technology has potential applications in the electronics industry for manufacturing advanced semiconductor devices and memory storage solutions.
Questions about the Technology: 1. How does this device improve data storage efficiency?
- This device enhances data storage efficiency by utilizing a vertical structure with a data storage structure and a channel layer.
2. What are the key advantages of the insulating structures in this device?
- The insulating structures play a crucial role in preventing interference and ensuring the proper functioning of the device.
Original Abstract Submitted
A device including a first structure and a second structure is provided. The device includes a substrate, a peripheral circuit and first junction pads on the substrate; a first insulating structure surrounding side surfaces of the first junction pads; second junction pads contacting the first junction pads; a second insulating structure on the first insulating structure; a passivation layer on the second insulating structure; an upper insulating structure between the passivation layer and the second insulating structure; a barrier capping layer between the upper insulating structure and the passivation layer; conductive patterns spaced apart from each other in the upper insulating structure; a first pattern structure between the upper insulating structure and the second insulating structure; a stack structure between the second insulating structure and the first pattern structure, and including gate layers; and a vertical structure passing through the stack structure and including a data storage structure and a channel layer.
