18624655. PLASMA GENERATING DEVICE, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kokusai Electric Corporation)
PLASMA GENERATING DEVICE, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Akihiro Sato of Toyama-shi (JP)
Tsuyoshi Takeda of Toyama-shi (JP)
Yukitomo Hirochi of Toyama-shi (JP)
PLASMA GENERATING DEVICE, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18624655 titled 'PLASMA GENERATING DEVICE, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
The abstract describes a substrate processing apparatus with a process chamber, a gas supplier, and a buffer structure containing plasma generation regions.
- The apparatus includes a gas supplier to provide gas for processing substrates.
- The buffer structure has multiple plasma generation regions where gas is converted into plasma using high-frequency power.
- There are gas supply ports for distributing gases generated in the plasma generation regions to the process chamber.
Potential Applications: - Semiconductor manufacturing - Thin film deposition - Surface modification processes
Problems Solved: - Efficient plasma generation - Uniform distribution of gases in the process chamber
Benefits: - Improved substrate processing efficiency - Enhanced control over plasma parameters - Consistent and reliable results
Commercial Applications: Title: Advanced Substrate Processing Apparatus for Semiconductor Manufacturing This technology can be utilized in semiconductor fabrication facilities to enhance the quality and efficiency of substrate processing, leading to higher yields and improved product performance.
Questions about the technology: 1. How does the buffer structure improve gas distribution in the process chamber? - The buffer structure with multiple plasma generation regions allows for more controlled and uniform distribution of gases in the process chamber, leading to improved processing results.
2. What advantages does high-frequency power supply offer in plasma generation? - High-frequency power supply enables efficient conversion of gas into plasma, ensuring consistent and reliable plasma parameters for substrate processing.
Original Abstract Submitted
There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.
