18615490. MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL simplified abstract (Micron Technology, Inc.)
Contents
MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL
Organization Name
Inventor(s)
Karthik Sarpatwari of Boise ID (US)
Kamal M. Karda of Boise ID (US)
Durai Vishak Nirmal Ramaswamy of Boise ID (US)
MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18615490 titled 'MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL
The abstract describes an apparatus with multiple data lines and a memory cell, including various materials and elements.
- The apparatus includes a first data line, a second data line, and a third data line, all electrically separated from each other.
- A memory cell is coupled to the data lines, with a first material between the first and second data lines.
- A second material is located over the first data line and the first material, electrically separated from the first material and coupled to the third data line.
- A memory element is electrically coupled to the second material, separated from the first material and data lines.
Potential Applications: - This technology could be used in memory storage devices or integrated circuits. - It may have applications in data processing systems or electronic devices requiring memory capabilities.
Problems Solved: - This technology addresses the need for efficient memory storage solutions in electronic devices. - It provides a way to store and retrieve data quickly and reliably.
Benefits: - Improved memory storage capacity and performance. - Enhanced data processing capabilities in electronic devices. - Potential for smaller and more efficient memory components.
Commercial Applications: - Memory storage devices for consumer electronics. - Integrated circuits for computers and data processing systems. - Potential applications in the semiconductor industry for memory solutions.
Questions about the technology: 1. How does this technology improve memory storage efficiency? 2. What are the potential limitations of this memory cell design?
Frequently Updated Research: - Stay updated on advancements in memory storage technology and semiconductor materials for potential improvements in memory cell design.
Original Abstract Submitted
Some embodiments include apparatuses and methods operating the apparatuses. One of the apparatuses includes a first data line located over a substrate, a second data line located over the first data line, a third data line located over the second data line and electrically separated from the first and second data lines, and a memory cell coupled to the first, second, and third data lines. The memory cell includes a first material between the first and second data lines and electrically coupled to the first and second data lines; a second material located over the first data line and the first material, the second material electrically separated from the first material and electrically coupled to the third data line; and a memory element electrically coupled to the second material and electrically separated from the first material and first and second data lines.
