18610263. SEMICONDUCTOR INTERCONNECT STRUCTURES WITH VERTICALLY OFFSET BONDING SURFACES, AND ASSOCIATED SYSTEMS AND METHODS simplified abstract (MICRON TECHNOLOGY, INC.)
SEMICONDUCTOR INTERCONNECT STRUCTURES WITH VERTICALLY OFFSET BONDING SURFACES, AND ASSOCIATED SYSTEMS AND METHODS
Organization Name
Inventor(s)
Kyle K. Kirby of Eagle ID (US)
SEMICONDUCTOR INTERCONNECT STRUCTURES WITH VERTICALLY OFFSET BONDING SURFACES, AND ASSOCIATED SYSTEMS AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18610263 titled 'SEMICONDUCTOR INTERCONNECT STRUCTURES WITH VERTICALLY OFFSET BONDING SURFACES, AND ASSOCIATED SYSTEMS AND METHODS
The semiconductor device described in the abstract features interconnect structures with vertically offset bonding surfaces.
- The device includes a semiconductor substrate covered by a dielectric material and an interconnect structure with conductive elements and insulating material.
- The conductive elements and insulating material have coplanar end surfaces.
- A perimeter structure surrounds the conductive elements and insulating material, with an uppermost surface vertically offset from the dielectric material.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications.
Problems Solved: - This innovation addresses the need for improved interconnect structures in semiconductor devices to enhance performance and reliability.
Benefits: - The vertically offset bonding surfaces in the interconnect structures can improve signal transmission and reduce interference in semiconductor devices.
Commercial Applications: - The technology can be applied in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics.
Questions about Semiconductor Devices with Vertically Offset Bonding Surfaces: 1. How does the vertically offset bonding surface in the interconnect structure benefit semiconductor devices? 2. What are the specific challenges in implementing interconnect structures with coplanar end surfaces in semiconductor devices?
Frequently Updated Research: - Researchers are continually exploring new materials and manufacturing techniques to further enhance the performance of semiconductor devices with advanced interconnect structures.
Original Abstract Submitted
Semiconductor devices having interconnect structures with vertically offset bonding surfaces, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a semiconductor substrate at least partially covered by a first dielectric material having an upper surface, and an interconnect structure extending therefrom. The interconnect structure can include a plurality of conductive elements, and a continuous region of a first insulating material at least partially between the plurality of conductive elements. The plurality of conductive elements and the continuous region can have coplanar end surfaces. The interconnect structure can further include a perimeter structure at least partially surrounding the plurality of conductive elements and the continuous region. The perimeter structure can have an uppermost surface that can be vertically offset from the upper surface of the first dielectric material and/or the coplanar end surfaces.
