18608949. Semiconductor structure simplified abstract (UNITED MICROELECTRONICS CORP.)
Contents
Semiconductor structure
Organization Name
Inventor(s)
Wei-Cheng Hung of New Taipei City (TW)
Yu-Jen Liu of Kaohsiung City (TW)
Semiconductor structure - A simplified explanation of the abstract
This abstract first appeared for US patent application 18608949 titled 'Semiconductor structure
The invention provides a semiconductor structure with a transistor on a substrate, featuring a gate structure, a source, and a drain.
- The transistor is positioned on the substrate and extends along a first direction.
- A plurality of supporting patterns are located within the gate structure, separated and arranged perpendicular to the first direction.
- At least four supporting patterns form a supporting pattern dashed line extending along the second direction.
Potential Applications: - This semiconductor structure can be used in the manufacturing of advanced electronic devices. - It can enhance the performance and efficiency of integrated circuits.
Problems Solved: - Provides structural support for the transistor components. - Improves the overall stability and functionality of the semiconductor device.
Benefits: - Enhanced reliability and durability of electronic devices. - Increased efficiency and performance of integrated circuits.
Commercial Applications: - This technology can be utilized in the production of high-performance computers, smartphones, and other electronic devices. - It can also be beneficial in the development of advanced sensors and communication devices.
Questions about the Semiconductor Structure: 1. How does the arrangement of supporting patterns improve the performance of the transistor? 2. What are the potential challenges in implementing this semiconductor structure in mass production?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor technology to leverage the full potential of this innovation.
Original Abstract Submitted
Abstract of Disclosure The invention provides a semiconductor structure, the semiconductor structure includes a substrate, a transistor disposed on the substrate, wherein the transistor comprises a gate structure, a source and a drain, and the gate structure of the transistor located on the substrate and extending along a first direction, and a plurality of supporting patterns located in the gate structure of the transistor, wherein the plurality of supporting patterns are separated from each other and arranged along a second direction, wherein the second direction is perpendicular to the first direction, and wherein at least four supporting patterns of the plurality of supporting patterns constitute a supporting pattern dashed line, wherein the supporting pattern dashed line extends along the second direction.
