18608017. INTEGRATED CIRCUIT simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about 3-Dimensional Stack Structure for SRAM Devices
- 1.13 Original Abstract Submitted
INTEGRATED CIRCUIT
Organization Name
Inventor(s)
INTEGRATED CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18608017 titled 'INTEGRATED CIRCUIT
Simplified Explanation
The patent application describes a 3-dimensional stack structure for an SRAM device that reduces size and improves reliability.
- Enables minimization of planar area occupied by unit cells
- Simplifies configuration of wiring connection structure between transistors
- Results in an integrated circuit with reduced size and improved reliability
Key Features and Innovation
- 3-dimensional stack structure for SRAM device
- Minimization of planar area occupied by unit cells
- Simplification of wiring connection structure between transistors
- Improved reliability and reduced size of integrated circuit
Potential Applications
- Semiconductor industry
- Electronics manufacturing
- Memory storage devices
Problems Solved
- Occupied planar area by unit cells
- Complex wiring connection structure
- Size and reliability of integrated circuits
Benefits
- Reduced size of integrated circuits
- Improved reliability of SRAM devices
- Simplified wiring connection structure
Commercial Applications
Integrated Circuit Manufacturing
The technology can be utilized in the production of smaller and more reliable integrated circuits, benefiting various industries such as consumer electronics, telecommunications, and computing.
Prior Art
Research on 3-dimensional stack structures in semiconductor devices and memory storage technologies can provide insights into prior art related to this innovation.
Frequently Updated Research
Ongoing research in semiconductor manufacturing processes and memory storage technologies may provide updates on advancements in 3-dimensional stack structures for integrated circuits.
Questions about 3-Dimensional Stack Structure for SRAM Devices
What are the potential challenges in implementing a 3-dimensional stack structure for SRAM devices?
Implementing a 3-dimensional stack structure may pose challenges in terms of manufacturing complexity, heat dissipation, and signal interference between stacked layers.
How does the 3-dimensional stack structure improve the reliability of SRAM devices?
The 3-dimensional stack structure reduces the distance between transistors, leading to faster signal transmission and lower susceptibility to external interference, thereby enhancing the reliability of SRAM devices.
Original Abstract Submitted
According to the inventive concept, based on the layout of a 3-dimensional stack structure enabling minimization of the planar area occupied by unit cells and simplification of the configuration of a wiring connection structure between transistors defining at least a portion of an SRAM device, an integrated circuit with a reduced size and improved reliability may be implemented.
