18607213. ORIGINAL, METHOD OF DETERMINING PATTERN OF ORIGINAL, AND METHOD OF EXPOSING simplified abstract (CANON KABUSHIKI KAISHA)

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ORIGINAL, METHOD OF DETERMINING PATTERN OF ORIGINAL, AND METHOD OF EXPOSING

Organization Name

CANON KABUSHIKI KAISHA

Inventor(s)

TORU Kobayashi of Tochigi (JP)

ORIGINAL, METHOD OF DETERMINING PATTERN OF ORIGINAL, AND METHOD OF EXPOSING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18607213 titled 'ORIGINAL, METHOD OF DETERMINING PATTERN OF ORIGINAL, AND METHOD OF EXPOSING

Simplified Explanation: The patent application describes a pattern formed on a multilayer film for exposing a photosensitive material, with an auxiliary pattern to reduce irregularities on the sidewall of the material.

Key Features and Innovation:

  • Pattern formed on a multilayer film for exposing photosensitive material
  • Auxiliary pattern included to reduce irregularities on the sidewall of the material
  • Main pattern and auxiliary pattern separated by a predetermined interval

Potential Applications: This technology could be used in the manufacturing of microelectronics, photolithography, and semiconductor industries.

Problems Solved: This technology addresses the issue of irregularities on the sidewall of photosensitive material during exposure processes.

Benefits:

  • Improved precision in patterning photosensitive material
  • Enhanced quality of exposed patterns
  • Reduction of defects in the manufacturing process

Commercial Applications: The technology could be valuable in the production of high-resolution displays, integrated circuits, and other electronic components.

Questions about the Technology: 1. How does the auxiliary pattern help reduce irregularities on the sidewall of the photosensitive material? 2. What are the specific advantages of using a multilayer film for exposing photosensitive material?

Frequently Updated Research: Researchers are continually exploring new materials and techniques to further improve the precision and efficiency of patterning processes in microelectronics and semiconductor industries.


Original Abstract Submitted

An original includes a pattern formed for use in exposure of a photosensitive material disposed on an upper side of a multilayer film provided on a substrate, wherein the pattern includes a main pattern and an auxiliary pattern disposed at a position separated by a predetermined interval from the main pattern, and wherein the auxiliary pattern suppresses irregularities on an inclined surface of a sidewall portion of the photosensitive material on which the main pattern is formed.