18604705. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
YOUNGGEUN Song of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18604705 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes various layers and components that work together to enable its functionality.
- The device consists of a substrate, a bit line, a first mold layer, a channel layer, one or more word lines, and a gate insulating layer.
- The first mold layer defines a mold opening that exposes a portion of the bit line and extends in a direction that intersects the bit line.
- The channel layer includes a first oxide semiconductor layer, a second oxide semiconductor layer, and an auxiliary channel layer.
- The word lines are located on the sidewalls of the channel layer and extend in a direction that intersects the first horizontal direction of the bit line.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications.
Problems Solved: - The innovation addresses the need for efficient and high-performance semiconductor devices with improved functionality.
Benefits: - The device offers enhanced performance, increased efficiency, and improved functionality compared to traditional semiconductor devices.
Commercial Applications: - The technology can be applied in the production of high-speed and high-capacity electronic devices such as smartphones, tablets, and computers.
Questions about the Technology: 1. How does the inclusion of the auxiliary channel layer improve the performance of the semiconductor device? 2. What are the potential challenges in implementing this technology in mass production processes?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor technology to understand how this innovation fits into the current landscape of electronic devices.
Original Abstract Submitted
A semiconductor device includes a substrate, a bit line that extends in a first horizontal direction on the substrate, a first mold layer on the bit line, wherein the first mold layer defines a mold opening that exposes a portion of an upper surface of the bit line and extends in a second horizontal direction that intersects the first horizontal direction, a channel layer on the bit line, one or more word lines on sidewalls of the channel layer and that extend in the second horizontal direction, and a gate insulating layer between the word line and the channel layer, where the channel layer includes a first oxide semiconductor layer, a second oxide semiconductor layer, and an auxiliary channel layer between the first oxide semiconductor layer and the second oxide semiconductor layer.
