18601832. MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
MEMORY DEVICE
Organization Name
Inventor(s)
Takashi Inukai of Yokohama (JP)
Takayuki Miyazaki of Tokyo (JP)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18601832 titled 'MEMORY DEVICE
The memory device described in the patent application consists of a memory cell array with four sub-arrays, each connected to different bit lines in various directions. Two circuits are included to manage the data flow between the sub-arrays and bit lines.
- Memory device with a complex architecture involving multiple sub-arrays and bit lines.
- Circuits are integrated to control the data transfer between the sub-arrays and bit lines efficiently.
- Utilizes a unique layout to optimize memory storage and retrieval processes.
- Offers potential for increased memory capacity and faster data access speeds.
- Represents an innovative approach to memory device design and operation.
Potential Applications: - Data storage systems - Computer memory modules - Embedded systems in electronic devices
Problems Solved: - Enhanced memory capacity - Improved data transfer speeds - Efficient data management within the memory device
Benefits: - Increased storage capacity - Faster data access - Improved overall performance of memory devices
Commercial Applications: Title: Advanced Memory Device for High-Performance Computing This technology can be utilized in high-performance computing systems, data centers, and other applications requiring fast and efficient memory storage solutions. The innovation can lead to improved processing speeds and overall system performance, making it ideal for industries that rely on large-scale data processing and storage.
Questions about the technology: 1. How does the unique layout of the memory device contribute to its efficiency? 2. What potential impact could this innovation have on the data storage industry in the future?
Frequently Updated Research: Stay updated on the latest advancements in memory device technology, including research on optimizing data transfer speeds, increasing memory capacity, and improving overall performance in various applications.
Original Abstract Submitted
According to one embodiment, a memory device includes, a memory cell array including first to fourth sub-arrays, a first bit line coupled to the first sub-array and the second sub-array, a second bit line arranged side by side with the first bit line in a first direction and coupled to the third sub-array and the fourth sub-array, a third bit line arranged at a position different from the first bit line in a second direction and coupled to at least the second sub-array and the third sub-array, a fourth bit line arranged side by side with the third bit line in the first direction and coupled to the fourth sub-array, a first circuit electrically coupled to the first bit line and the second bit line, and a second circuit electrically coupled to the third bit line and the fourth bit line.
