18600715. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Tomohiko Ito of Kawasaki Kanagawa (JP)
Hiroshi Yoshihara of Fujisawa Kanagawa (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18600715 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract includes two memory strings, each with a memory cell transistor, and a shared word line connected to the gate of each transistor.
- The first memory cell transistor has a threshold voltage lower than a specified voltage during a read operation, while the second memory cell transistor has a threshold voltage equal to or higher than the specified voltage.
- A control circuit is designed to provide a voltage equal to or lower than the specified voltage to the shared word line during the first read operation.
Potential Applications: - This technology can be used in various memory storage devices such as solid-state drives, smartphones, and tablets. - It can also be applied in embedded systems, IoT devices, and other electronic gadgets requiring non-volatile memory.
Problems Solved: - Enhances data reading efficiency by optimizing threshold voltages of memory cell transistors. - Improves overall performance and reliability of semiconductor memory devices.
Benefits: - Faster data retrieval speeds due to optimized threshold voltages. - Increased durability and longevity of memory devices. - Enhanced energy efficiency in data storage operations.
Commercial Applications: Title: Advanced Semiconductor Memory Technology for Enhanced Data Storage This technology can revolutionize the memory storage industry by providing faster, more reliable, and energy-efficient solutions for various electronic devices. It can cater to the growing demand for high-performance memory solutions in consumer electronics, data centers, and industrial applications.
Questions about Semiconductor Memory Device: 1. How does the control circuit ensure the threshold voltages of the memory cell transistors are optimized during read operations? 2. What are the potential implications of using this technology in next-generation memory storage devices?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor memory technology to leverage cutting-edge solutions for data storage needs. Explore research papers, industry reports, and patents related to memory cell optimization and control circuit design.
Original Abstract Submitted
According to one embodiment, a semiconductor memory device includes a first memory string including a first memory cell transistor; a second memory string including a second memory cell transistor; a first word line commonly coupled to a gate of each of the first memory cell transistor and the second memory cell transistor; and a control circuit, wherein during a first read operation of reading data from the first memory string, a threshold voltage of the first memory cell transistor is less than a first voltage, a threshold voltage of the second memory cell transistor is equal to or greater than the first voltage, and the control circuit is configured to supply a voltage equal to or less than the first voltage to the first word line.
