18599910. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18599910 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes fin-type active patterns, a gate structure, separation structures, source/drain regions, an interlayer insulating layer, a contact structure, a buried conductive structure, and a power transmission structure.
- The semiconductor device features fin-type active patterns on a substrate, gate structure, and separation structures.
- Source/drain regions are positioned on the fin-type active patterns adjacent to the gate structure.
- An interlayer insulating layer covers the source/drain regions.
- A contact structure connects to the source/drain regions.
- A buried conductive structure, with a defined width, is electrically connected to the contact structure.
- A power transmission structure extends from the substrate towards the surface and links to the buried conductive structure.
Potential Applications: - This technology can be applied in the semiconductor industry for advanced integrated circuits. - It may find use in high-performance computing systems and mobile devices.
Problems Solved: - Enhances the efficiency and performance of semiconductor devices. - Improves the connectivity and power transmission within the device.
Benefits: - Increased speed and reliability in electronic devices. - Enhanced power distribution capabilities. - Potential for smaller and more efficient semiconductor designs.
Commercial Applications: Title: Advanced Semiconductor Device for Enhanced Performance This technology can revolutionize the semiconductor industry by enabling faster and more reliable electronic devices. It has significant implications for the development of high-performance computing systems and mobile devices, enhancing their speed and power efficiency.
Questions about the technology: 1. How does this semiconductor device improve power transmission efficiency? - The buried conductive structure and power transmission structure enhance power distribution within the device, leading to improved efficiency. 2. What are the potential commercial applications of this advanced semiconductor technology? - This technology can be utilized in various electronic devices, from smartphones to high-performance computing systems, to enhance their speed and reliability.
Original Abstract Submitted
Provided is a semiconductor device, the semiconductor device, including: a plurality of fin-type active patterns extending in a first direction on a substrate; a gate structure extending in a second direction, and crossing the plurality of fin-type active patterns; a plurality of separation structures extending in the second direction; source/drain regions disposed on the plurality of fin-type active patterns on both sides of the gate structure; an interlayer insulating layer covering the source/drain regions on the substrate; a contact structure connected to at least one of the source/drain regions; a buried conductive structure electrically connected to the contact structure in the interlayer insulating layer, and having a first width defined by a distance between adjacent separation structures among the plurality of separation structures; and a power transmission structure extending from the second surface toward the first surface of the substrate, and connected to the buried conductive structure.
