18599540. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Yosuke Kobayashi of Seoul (KR)
Naoki Matsushita of Seoul (KR)
Masayoshi Iwayama of Seoul (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18599540 titled 'MAGNETIC MEMORY DEVICE
Simplified Explanation: The magnetic memory device described in the patent application includes various components such as interconnects, memory cells, transistors, sense amplifiers, and a control circuit. The memory cell consists of a magnetoresistive effect element and a selector element connected in series between the interconnects. During a read operation, the control circuit charges and discharges the interconnects to retrieve data from the memory cell.
- The magnetic memory device comprises interconnects, memory cells, transistors, sense amplifiers, and a control circuit.
- The memory cell contains a magnetoresistive effect element and a selector element connected in series between the interconnects.
- The control circuit facilitates the read operation by charging and discharging the interconnects to access data stored in the memory cell.
Potential Applications: 1. Data storage devices 2. Computer memory systems 3. Magnetic sensors
Problems Solved: 1. Efficient data retrieval from memory cells 2. Enhanced performance of magnetic memory devices
Benefits: 1. Faster read operations 2. Improved data access speed 3. Higher efficiency in memory storage
Commercial Applications: The technology can be utilized in various industries such as data storage, computing, and sensor manufacturing. It can lead to faster and more reliable memory devices, enhancing the overall performance of electronic systems.
Prior Art: Researchers can explore prior patents related to magnetoresistive memory devices and selector elements to understand the evolution of this technology.
Frequently Updated Research: Researchers are constantly working on improving magnetoresistive memory devices to increase storage capacity and speed.
Questions about Magnetic Memory Devices: 1. How does the magnetoresistive effect element contribute to the functionality of the memory cell? 2. What are the potential challenges in scaling up this technology for commercial production?
Original Abstract Submitted
A magnetic memory device according to an embodiment includes a magnetic memory device includes first and second interconnect, a memory cell, a transistor, first and second sense amplifiers, and a control circuit. The memory cell includes a magnetoresistive effect element and a selector element. The magnetoresistive effect element and the selector element are coupled in series between the first and second interconnect. In a read operation, the control circuit is further configured to: charge the first interconnect to a first voltage; and discharge the first interconnect via the transistor by applying a second voltage to a gate end of the transistor.
